K. Maeguchi

An overview of radiation-induced interface traps in MOS structures

Total dose failures in advanced electronics from single ions

Radiation-Induced Interface-State Generation in MOS Devices

Basic mechanisms and modeling of single-event upset in digital microelectronics

Total ionizing dose effects in MOS oxides and devices

Interface trap formation via the two-stage H/sup +/ process

Interface-trap building rates in wet and dry oxides

Implementing QML for radiation hardness assurance

Generic impulse response function for MOS systems and its application to linear response analysis

Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

Time-dependent interface trap effects in MOS devices

1.5 nm direct-tunneling gate oxide Si MOSFET's

Total Ionizing Dose Effects on Triple-Gate FETs

Sodium/Calcium Exchange: Its Physiological Implications

Radiation Effects in MOS Oxides

High-κ gate dielectrics: Current status and materials properties considerations

Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure

Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation

Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's

A 4-Mb CMOS SRAM with a PMOS thin-film-transistor load cell