Citation Impact

Citing Papers

Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection
2006
Photoconductance and inverse photoconductance in films of functionalized metal nanoparticles
2009 StandoutNatureNobel
Coaxial silicon nanowires as solar cells and nanoelectronic power sources
2007 StandoutNature
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
1993 StandoutNobel
First-principles calculations for point defects in solids
2014 Standout
Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient
2003
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
1996 StandoutNobel
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Barrier inhomogeneities at Schottky contacts
1991 Standout
InGaP/GaAs-based multijunction solar cells
2005
Resonance Raman scattering and optical absorption studies of CdSe microclusters at high pressure
1988 StandoutNobel
Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN
1995 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Mechanistic Insights and Controlled Synthesis of Radioluminescent ZnSe Quantum Dots Using a Microfluidic Reactor
2018 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Variation of Surface Potentials of Si-Doped AlxGa1-xN (0 <x< 0.87) Grown on AlN/Sapphire Template by Metal–Organic Vapor Phase Epitaxy
2010
Effect of N doping on the structural properties of ZnSe epitaxial layers grown by molecular beam epitaxy
1993
Photoluminescence dynamics of AlGaN quantum wells with built‐in electric fields and localized states
2009
New allyl selenide and trialkylphosphine selenide precursors for metalorganic vapor phase epitaxy of ZnSe
1994
Optical pulse synthesis with three cw semiconductor lasers using nonlinear phase-locking
1993 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Characterization of electron- or proton-irradiated Si space solar cells by THz spectroscopy
2006
Deformation Potentials of k = 0 States of Tetrahedral Semiconductors
1984
Fundamental analysis for visible-light communication system using LED lights
2004 Standout
Growth and characterization of single-crystal ZnSe nanorods via surfactant soft-template method
2004
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN
2011 Nobel
Schottky barrier heights of metals contacting to p-ZnSe
1997 StandoutNobel
Origin of the low doping efficiency of nitrogen acceptors in ZnSe grown by metalorganic chemical vapor deposition
1993
Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
1998 Standout
Ion implantation of epitaxial GaN films: damage, doping and activation
1997 StandoutNobel
Development of ZnSe‐based white light emitting diodes with longer lifetimes of over 10,000 hr
2006
Optical Properties of ZnSe Epilayers and Films
1990
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Blue-green laser diodes
1991 Standout
Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy
1996 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
2004 Standout
Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
2008 StandoutNobel
Room-Temperature Ultraviolet Nanowire Nanolasers
2001 StandoutScience
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Electronic states of semiconductor clusters: Homogeneous and inhomogeneous broadening of the optical spectrum
1988 StandoutNobel
Heavily doped p-ZnSe:N grown by molecular beam epitaxy
1991
Multijunction GaInN-based solar cells using a tunnel junction
2014 StandoutNobel
Evaluation of Zn{N[Si(CH3)3]2}2 as ap-type dopant in OMVPE growth of ZnSe
1992
High-power InGaN/GaN double-heterostructure violet light emitting diodes
1993 StandoutNobel
A new Richardson plot for non-ideal schottky diodes
1988
Luminescence properties of mechanically nanoindented ZnSe
2011
Conductivity control of GaN and fabrication of UV/blue GaN light emitting devices
1993 StandoutNobel
Cutting-edge terahertz technology
2007 Standout
The properties of ZnSc layers grown on GaAs and Si substrates by atomic layer epitaxy
1998
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
ZnO Nanowire UV Photodetectors with High Internal Gain
2007 Standout
Synthesis of Luminescent Thin-Film CdSe/ZnSe Quantum Dot Composites Using CdSe Quantum Dots Passivated with an Overlayer of ZnSe
1996 StandoutNobel
Nanomaterials: a review of synthesis methods, properties, recent progress, and challenges
2021 Standout

Works of K. Ando being referenced

Demonstration of blue-ultraviolet avalanche photo-diodes of II–VI wide bandgap compounds grown by MBE
2000
High quantum efficiency blue–ultraviolet ZnSe pin photodiode grown by MBE
2000
High concentration nitrogen doping in MOVPE grown ZnSe
1990
Explanation for carrier removal and type conversion in irradiated silicon solar cells
1998
Nonradiative e-h Recombination Characteristics of Mid-Gap Electron Trap in AlxGa1-xAs (x=0.4) Grown by Molecular Beam Epitaxy
1987
Stable avalanche-photodiode operation of ZnSe-based p+–n structure blue-ultraviolet photodetectors
2000
Acceptor compensation mechanism by midgap defects in nitrogen-doped ZnSe films
1991
Nitrogen-doped p-type ZnSe films grown by MOVPE
1988
Photoluminescence and photoacoustic spectra of N-doped ZnSe epitaxial layers grown by molecular beam epitaxy
2000
Microscopic defect induced slow-mode degradation in II–VI based blue–green laser diodes
2000
Deep level analysis of radiation-induced defects in Si crystals and solar cells
1999
Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates
2006
Resonant Brillouin scattering by amplified phonons in CdS
1975
Rankless by CCL
2026