Jun‐Mo Yang

High dielectric constant oxides

Boron penetration studies from p+ polycrystalline Si through HfSixOy

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

High dielectric constant gate oxides for metal oxide Si transistors

Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition

Boron penetration and thermal instability of p+ polycrystalline-Si/ZrO2/SiO2/n-Si metal-oxide-semiconductor structures