Standout Papers
Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Nanostructured hydrotreating catalysts for electrochemical hydrogen evolution
2014 Standout
Exciton Dynamics in Semiconductor Nanocrystals
2013
Optical Properties of ZnO Nanostructures
2006 Standout
Fundamentals of zinc oxide as a semiconductor
2009 Standout
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Encyclopedia of Analytical Chemistry
2006 Standout
Defect luminescence of GaN grown by pulsed laser deposition
2001
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
Rapid Detection of COVID-19 Causative Virus (SARS-CoV-2) in Human Nasopharyngeal Swab Specimens Using Field-Effect Transistor-Based Biosensor
2020 Standout
White light-emitting diode based on fluorescent SiC
2012 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
π-Conjugated Polymers for Organic Electronics and Photovoltaic Cell Applications
2010 Standout
Resonant Raman and FTIR spectra of carbon doped GaN
2014 StandoutNobel
Characterization of oxygen defects in diamond by means of density functional theory calculations
2016
A comprehensive review of ZnO materials and devices
2005 Standout
Lanthanide-Activated Phosphors Based on 4f-5d Optical Transitions: Theoretical and Experimental Aspects
2017 Standout
GaN-Based p–n Junction Blue-Light-Emitting Devices
2013 StandoutNobel
Hole mobility in zincblende c–GaN
2004
Unusual luminescence lines in GaN
2003
Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials
2018
Room temperature ultraviolet laser emission from ZnO nanocrystal thin films grown by laser MBE
1998
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Selective reading of stored information in RE doped aluminium perovskites
2014
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Microstructural evolution in m-plane GaN growth on m-plane SiC
2008
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Anharmonicity effects in impurity-vacancy centers in diamond revealed by isotopic shifts and optical measurements
2017 StandoutNobel
Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
2013 StandoutNobel
Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy
2003 StandoutNobel
Observation of a 1.979-eV spectral line of a germanium-related color center in microdiamonds and nanodiamonds
2020 StandoutNobel
Self-Supported Nanoporous Cobalt Phosphide Nanowire Arrays: An Efficient 3D Hydrogen-Evolving Cathode over the Wide Range of pH 0–14
2014 Standout
Organoselenium Chemistry: Role of Intramolecular Interactions
2010 Standout
Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties
2006
Fluorescent SiC as a new material for white LEDs
2012
Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
2006 StandoutNobel
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
2003 StandoutNobel
Development and prospects of nitride materials and devices with nonpolar surfaces
2008
Recent advances in transition metal phosphide nanomaterials: synthesis and applications in hydrogen evolution reaction
2016 Standout
Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE
2007 StandoutNobel
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition
2002
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Refractory Diborides of Zirconium and Hafnium
2007 Standout
Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
2002
Recent Advances in Electrocatalytic Hydrogen Evolution Using Nanoparticles
2019 Standout
Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
2013 StandoutNobel
Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas inm-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
2013 StandoutNobel
Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots
2009
Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC
2011
Effects of oxygen plasma condition on MBE growth of ZnO
2000
Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
2009
Growth of ZnO by Molecular Beam Epitaxy Using NO2 as Oxygen Source
1999
Thiolates, selenolates, and tellurolates of the s-block elements
2000
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Atomic arrangement at the AlN/ZrB2 interface
2002 StandoutNobel
Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of m-Plane GaN
2008
Key inventions in the history of nitride-based blue LED and LD
2007 StandoutNobel
Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
2009 StandoutNobel
Room-temperature stimulated emission of excitons in ZnO/(Mg, Zn)O superlattices
2000
Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
2013 StandoutNobel
ZnO nanowires with high aspect ratios grown by metalorganic chemical vapor deposition using gold nanoparticles
2005
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
Nanoscaled Metal Borides and Phosphides: Recent Developments and Perspectives
2013
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
Localized states at InGaN/GaN quantum well interfaces
1999
Seeded growth of AlN bulk crystals in m- and c-orientation
2009
Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates
2013 StandoutNobel
Facile synthesis and electrochemical performance of the nanoscaled FeP anode
2014 StandoutNobel
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Complexes of silicon, vacancy, and hydrogen in diamond: A density functional study
2015
Fluorescent SiC and its application to white light-emitting diodes
2011 StandoutNobel
Temperature dependence of thermal expansion and elastic constants of single crystals of ZrB2 and the suitability of ZrB2 as a substrate for GaN film
2002
Works of Jun Suda being referenced
Growth of AlN $(11\bar{2}0)$ on 6H-SiC $(11\bar{2}0)$ by Molecular-Beam Epitaxy
2002
m -plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga∕N flux ratios on m-plane 4H-SiC substrates
2007
Time-resolved nonlinear luminescence of biexcitons in ZnSe-Zn x Mg 1 − x S y Se 1 − y
1995
Interface state density of SiO2/p-type 4H-SiC (0001), (112¯), (11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes
2016
The First-Order Raman Spectra and Lattice Dynamics for YAlO3Crystal
2003
Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy
1998
ZrB2Substrate for Nitride Semiconductors
2003 StandoutNobel
4H-polytype AlN grown on 4H-SiC(1120) substrate by polytype replication
2003
Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates
2006
Negative-U H
2013
A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy
2006
Selective Area Growth of Cubic GaN on 3C-SiC (001) by Metalorganic Molecular Beam Epitaxy
2000
Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H–SiC substrate by HCl gas etching
2002
High-quality nonpolar 4H-AlN grown on 4H-SiC (112¯) substrate by molecular-beam epitaxy
2006
Bandgap shift by quantum confinement effect in 〈100〉 Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations
2011
Experimental and Theoretical Investigations on Short-Channel Effects in 4H-SiC MOSFETs
2005
Gas-Source Molecular Beam Epitaxial Growth of (Zn, Mg)(S, Se) Using Bis-methylcyclopentadienyl-magnesium and Hydrogen Sulfide
1994
Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
2001 StandoutNobel
Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation
2008
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
2006 StandoutNobel
Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy
2002
The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C
2008