Citation Impact
Citing Papers
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
On the Structure of Carbon‐Supported Selenium‐Modified Ruthenium Nanoparticles as Electrocatalysts for Oxygen Reduction in Fuel Cells
2007
Deconstructing the photon stream from single nanocrystals: from binning to correlation
2013 StandoutNobel
Energetics and Vibrational States for Hydrogen on Pt(111)
2002 StandoutNobel
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
On the structural nature of aluminium-based metallic glasses
1990
Recent Advances in Electrocatalysts for Oxygen Reduction Reaction
2016 Standout
From visible to white light emission by GaN quantum dots on Si(111) substrate
1999
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Eco‐Friendly Higher Manganese Silicide Thermoelectric Materials: Progress and Future Challenges
2018
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
2009 StandoutNobel
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
2010 StandoutNobel
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
2007 StandoutNobel
In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells
2000
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
2008 StandoutNobel
Multiformity and fluctuation of Cu ordering in Cu2Se thermoelectric materials
2015
Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire
2002
Design and Characterization of Micro Thermoelectric Cross-Plane Generators With Electroplated ${\rm Bi}_{2}{\rm Te}_{3}$ , ${\rm Sb}_{x}{\rm Te}_{y}$ , and Reflow Soldering
2014
Light emission versus energy gap in group‐III nitrides: hydrostatic pressure studies
2003
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Time-resolved photoluminescence of GaN/Al0.5Ga0.5N quantum wells
2000
Advanced Thermoelectric Design: From Materials and Structures to Devices
2020 Standout
Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2010 StandoutNobel
Flexible thermoelectric power generator with Y-type structure using electrochemical deposition process
2017
Higher efficiency InGaN laser diodes with an improved quantum well capping configuration
2002 StandoutNobel
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Accurate calculation of polarization-related quantities in semiconductors
2001
Buried stressors in nitride semiconductors: Influence on electronic properties
2005
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Tetrathiafulvalenes, Oligoacenenes, and Their Buckminsterfullerene Derivatives: The Brick and Mortar of Organic Electronics
2004 Standout
A Comparative Theoretical Study of the Hydrogen, Methyl, and Ethyl Chemisorption on the Pt(111) Surface
2000 Nobel
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
2005 StandoutNobel
Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
2005 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
2003
Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
2001
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Perspectives on thermoelectrics: from fundamentals to device applications
2011
Structural properties of self-organized semiconductor nanostructures
2004
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Internal electric field effect on luminescence properties of ZnO/(Mg,Zn)O quantum wells
2004
Simultaneous enhancement in thermoelectric performance and mechanical stability of p-type SiGe alloy doped with Boron prepared by mechanical alloying and spark plasma sintering
2018
Effects of ball milling on microstructures and thermoelectric properties of higher manganese silicides
2015 StandoutNobel
Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy
2003
Recent Advances in Fullerene Superconductivity
2002
Advances in thermoelectric materials research: Looking back and moving forward
2017 StandoutScience
Enhancement of thermoelectric properties by Na doping in Te-free p-type AgSbSe2
2014
High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
2003
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Rationally Designing High-Performance Bulk Thermoelectric Materials
2016 Standout
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Fabrication and characterization of ultrathin thermoelectric device for energy conversion
2018
Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
2001
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy
2000
Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition
2007 StandoutNobel
Metallic Glasses
1995 StandoutScience
Prospects for LED lighting
2009 StandoutNobel
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
2011 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
2006 StandoutNobel
Coupling between adjacent crystal planes in heterogeneous catalysis by propagating reaction–diffusion waves
1994 StandoutNatureNobel
Dynamics of O2 on Pt{100}-hex-R0.7°: activated adsorption with a strong surface temperature enhancement
1993
Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN
2002
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2007 StandoutNobel
Full Color Emission from II-VI Semiconductor Quantum Dot-Polymer Composites
2000 StandoutNobel
A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser
2000
Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells
2004
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Dissociative chemisorption of methane on Ir(111): Evidence for direct and trapping-mediated mechanisms
1997
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points
2000 Standout
A climbing image nudged elastic band method for finding saddle points and minimum energy paths
2000 Standout
Recent advances in high-performance bulk thermoelectric materials
2016
Honeycomb Carbon: A Review of Graphene
2009 Standout
Works of Julia Simon being referenced
Crystallization study of the melt spun Al70Fe13Si17 glass
1986
Thermally assisted tunneling:CH 4
1991
Optimization and Fabrication of a Thick Printed Thermoelectric Device
2011
A new generation of high performance large-scale and flexible thermo-generators based on (Bi,Sb)2 (Te,Se)3 nano-powders using the Spark Plasma Sintering technique
2011
High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy
1999
A comparative study of Spark Plasma Sintering (SPS), Hot Isostatic Pressing (HIP) and microwaves sintering techniques on p-type Bi2Te3 thermoelectric properties
2012
Influence of in situ formed MoSi2 inclusions on the thermoelectrical properties of an N-type silicon–germanium alloy
2013
Giant electric fields in unstrained GaN single quantum wells
1999
Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
2000
Microstructure investigations and thermoelectrical properties of a P-type polycrystalline higher manganese silicide material sintered from a gas-phase atomized powder
2014
Thermoelectric properties of nanostructured Si1−xGex and potential for further improvement
2010
Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
1998
Composition fluctuations in the demixed supercooled liquid state of Zr 41 Ti 14 Cu 12.5 Ni 10 Be 22.5 : a combined ASAXS and SANS study
2001
Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy
2000
Spontaneous polarization effects inGaN / Al x Ga 1 − x N
2000