Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Applications of Ultrasound to the Synthesis of Nanostructured Materials
2010 Standout
Chemical beam epitaxy of InP and GaAs
1984
Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy
1988 StandoutNobel
Localization and scaling in the quantum Hall regime
1986 StandoutNobel
Energy levels and alloy scattering in InP-In (Ga)As heterojunctions
1983
Enhanced thermal stability of single longitudinal mode coupled cavity lasers
1985
MOVPE growth of GaAs using a N2 carrier
1992
Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
1998 StandoutNobel
Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition
1983
Distributed feedback lasers: An overview
1991
Multiparticle interactions and stimulated emission in chemically synthesized quantum dots
2002 StandoutNobel
Band lineups and deformation potentials in the model-solid theory
1989 Standout
Film/Substrate Orientation Relationship in theAIN / 6 H
1996 StandoutNobel
Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years
2000
An experimental test of two-parameter scaling of integral quantum Hall effect
1986 StandoutNobel
Scaling of the quantum Hall plateau-plateau transition in graphene
2009 StandoutNobel
Self-limiting growth of InP by alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
1999
Negative photoconductivity of two-dimensional holes in GaAs/AlGaAs heterojunctions
1985 StandoutNobel
Electronic properties of In0.53Ga0.47As-InP single quantum wells grown by chemical beam epitaxy
1987 StandoutNobel
Gain and the threshold of three-dimensional quantum-box lasers
1986
From amplified spontaneous emission to microring lasing using nanocrystal quantum dot solids
2002 StandoutNobel
Color-selective semiconductor nanocrystal laser
2002 StandoutNobel
First observation of quantum Hall effect in a GaInAsP-InP heterostructure grown by metalorganic vapor deposition
1987 StandoutNobel
Sonochemical Preparation of GaSb Nanoparticles
2002
Optical Gain and Stimulated Emission in Nanocrystal Quantum Dots
2000 StandoutScienceNobel
Water electrolysis: from textbook knowledge to the latest scientific strategies and industrial developments
2022 Standout
LPE of buried heterostructure laser devices
1986
Zn related electroluminescent properties in MOVPE grown GaN
1988 StandoutNobel
Reflection of ballistic electrons from diffusive regions
1994 StandoutNobel
Gain spectra of quantum-well lasers
1983
Low-temperature investigations of the quantum Hall effect inIn x Ga 1 − x A s − I n P
1983
Experiments on Delocalization and University in the Integral Quantum Hall Effect
1988 StandoutNobel
Non-linear transduction strategies for chemo/biosensing on small length scales
2005 StandoutNobel
Effective masses in Sn-doped Ga1−xAlxAs (x<0.33) determined by the Shubnikov–de Haas effect
1985
The quantum Hall effect in modulation doped In0.53Ga 0.47As-InP heterojunctions
1982
Quantization of the Hall effect in an anisotropic three-dimensional electronic system
1986 StandoutNobel
Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
1989 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa)As
1984 StandoutNobel
Theory of hot-electron magnetophonon resonance in quasi-two-dimensional quantum-well structures
1992 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Recent Advances in Electrocatalytic Hydrogen Evolution Using Nanoparticles
2019 Standout
High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor deposition
1990
Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition
1982
The magnetophonon effect
1985
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Growth and characterization of InGaAsP lattice-matched to InP
1981
Soft‐Lithographically Embossed, Multilayered Distributed‐Feedback Nanocrystal Lasers
2004 StandoutNobel
Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
1984
Morphology of organometallic CVD grown GaAs epitaxial layers
1983
Doping of gallium nitride using disilane
1995
Using diode lasers for atomic physics
1991 StandoutNobel
Buried-heterostructure lasers fabricated by in situ processing techniques
1990
Luminescences from localized states in InGaN epilayers
1997 StandoutNobel
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
1989 StandoutNobel
Observation of standing spin waves in thin Fe films by means of Raman spectroscopy
1985 StandoutNobel
Chemical vapour deposition of coatings
2003
Two-dimensional magnetophonon resonance. I. GaInAs-InP superlattices
1983
Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
2006 StandoutNobel
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Spectroscopy of excited states inIn 0.53 Ga 0.47
1986
Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures
1984 StandoutNobel
Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
1983
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Control of strain in GaN by a combination of H2 and N2 carrier gases
2001 StandoutNobel
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
1989 StandoutNobel
Temperature dependence of the quantized Hall effect
1985 StandoutNobel
Selective vapor-phase deposition on patterned substrates
1990
Novel physics in two dimensions with modulation-doped heterostructures
1984 StandoutNobel
Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
1999
Synthesis, Characterization, and Properties of Metal Phosphide Catalysts for the Hydrogen-Evolution Reaction
2016
AlN/GaN superlattices grown by gas source molecular beam epitaxy
1991 StandoutNobel
Multiexcitonic two-state lasing in a CdSe nanocrystal laser
2004 StandoutNobel
Energy band-gap bowing parameter in an AlxGa1−x N alloy
1987 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Expanded self-limiting growth condition of InP using alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
2000
Transport through InGaAs-InP superlattices grown by chemical beam epitaxy
1989 StandoutNobel
Cathodoluminescence Properties of Undoped and Zn-Doped AlxGa1-xN Grown by Metalorganic Vapor Phase Epitaxy
1991 StandoutNobel
Effect of long-range potential fluctuations on scaling in the integer quantum Hall effect
1992 StandoutNobel
Works of J.P. Duchemin being referenced
cw operation of 1.57-μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor deposition
1984
Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPE
1982
Ga x In 1− x As y P 1− y /InP d.h. laser emitting at 1.15 μm grown by low-pressure metalorganic c.v.d.
1980
1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD
1984
Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure
1983
TEG in LP-MO CVD Ga 0.47 In 0.53 As-InP superlattice
1982
A New Method for Growing GaAs Epilayers by Low Pressure Organometallics
1979
Low pressure-MOCVD growth of Ga0.47In0.53As–InP heterojunction and superlattices
1983
Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD
1985
Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition
1985
A new method for the growth of GaAs epilayer at low H2 pressure
1978
Selected area growth of InP by low pressure metalorganic chemical vapor deposition on ion implanted InP substrates
1983
cw phase-locked array Ga0.25In0.75As0.5P0.5-InP high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition
1987
Two-dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition
1985
First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands
1986
Low pressure CVD of III–V compounds
1981
Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys
1984
Low-Pressure Chemical Vapor Deposition
1982
Low pressure metalorganic chemical vapor deposition of InP and related compounds
1983
Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)
1982
1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVD
1981
Bulk and transfer doping effects in AlxGa1−xAs layers grown on semi-insulating GaAs substrates
1984
GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications
1981
Growth of Ga 0.47 In 0.53 As on InP by low-pressure m.o. c.v.d.
1980
Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 μm
1983
Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD
1983
Comparison of FET performance versus material growth techniques
1981