Standout Papers

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors 2008 2026 2014 2020 725
  1. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors (2008)
    Jae Kyeong Jeong, Hui Yang et al. Applied Physics Letters

Immediate Impact

1 by Nobel laureates 8 from Science/Nature 86 standout
Sub-graph 1 of 21

Citing Papers

Selectivity in Chemiresistive Gas Sensors: Strategies and Challenges
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Materials-Driven Soft Wearable Bioelectronics for Connected Healthcare
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2 intermediate papers

Works of Jong Han Jeong being referenced

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
2008 Standout
High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
2007

Author Peers

Author Last Decade Papers Cites
Jong Han Jeong 2470 1666 658 17 2.5k
Shinhyuk Yang 2438 1737 617 58 2.6k
Hye Dong Kim 3557 2424 974 33 3.6k
J. J. Brown 2039 1084 565 16 2.1k
Yeon‐Gon Mo 3914 2755 1060 38 4.0k
Xukai Xin 2149 2116 1106 23 3.3k
Changjung Kim 4203 1983 1138 35 4.3k
Ihun Song 2431 1503 573 52 2.5k
Ke Zhao 1742 2473 385 45 3.0k
Linfeng Pan 2326 1974 920 36 3.5k
Hye Ji Han 1956 1189 1172 16 2.1k

All Works

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2026