Standout Papers

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures 2012 2026 2016 2021 2.0k
  1. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures (2012)
    L. Britnell, Roman Gorbachev et al. Science
  2. Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers (2012)
    L. Britnell, Roman Gorbachev et al. Nano Letters

Immediate Impact

47 by Nobel laureates 44 from Science/Nature 227 standout
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Citing Papers

A Review of Scalable Hexagonal Boron Nitride (h‐BN) Synthesis for Present and Future Applications
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156 intermediate papers

Works of Jon Leist being referenced

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
2012 StandoutScienceNobel
Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
2012 StandoutNobel
and 1 more

Author Peers

Author Last Decade Papers Cites
Jon Leist 1025 438 620 2472 10 2.7k
D. M. Basko 652 631 584 2222 13 2.5k
William S. Whitney 972 693 739 1883 8 2.4k
Enge Wang 1150 283 610 2133 20 2.5k
Osvaldo Del Pozo-Zamudio 1323 467 598 2213 17 2.6k
Filippo Pizzocchero 852 385 352 1749 14 1.9k
Daniel Waldmann 1261 775 758 2688 18 2.9k
Bjarke S. Jessen 966 513 519 2001 30 2.3k
Minyong Han 1043 355 607 2192 9 2.5k
Helin Cao 963 594 718 2147 22 2.4k
Shudong Xiao 1281 808 741 2416 8 2.8k

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