Citation Impact
Citing Papers
LAMMPS - a flexible simulation tool for particle-based materials modeling at the atomic, meso, and continuum scales
2021 Standout
Observation of Higher Sub-band inn
1975 StandoutNobel
Quantum resonances in the valence bands of germanium. II. Cyclotron resonances in uniaxially stressed crystals
1974
Piezo-Electroreflectance in Ge, GaAs, and Si
1968
Thermal Expansion of Silicon and Zinc Oxide (II)
1969
What is the Young's Modulus of Silicon?
2010 Standout
Fano resonances in nanoscale structures
2010 Standout
Recombination of Electrons and Donors inn
1961
Band lineups and deformation potentials in the model-solid theory
1989 Standout
Energy Structure and Quantized Hall Effect of Two-Dimensional Holes
1983 StandoutNobel
Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena
1995 StandoutNobel
Ohmic hole mobility in cubic semiconductors
1974
A comprehensive review of ZnO materials and devices
2005 Standout
Higher excited electronic states in clusters of ZnSe, CdSe, and ZnS: Spin-orbit, vibronic, and relaxation phenomena
1986 StandoutNobel
Bulk hot-electron properties of cubic semiconductors
1979
Shubnikov-de Haas oscillations in p-type inversion layers on n-type silicon
1974 StandoutNobel
Impurity spectroscopy on tellurium by means of magnetoresistance measurements under nonohmic conditions
1978 StandoutNobel
New Directions for Low‐Dimensional Thermoelectric Materials
2007 Standout
Efficient pseudopotentials for plane-wave calculations
1991 Standout
Stress-Induced Band Gap and Related Phenomena in Gray Tin
1972
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
1983 Standout
PANNA: Properties from Artificial Neural Network Architectures
2020
Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surface
1976 StandoutNobel
Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials
1963 Standout
Hole drift velocity in silicon
1975
Far-infrared photoconductivity of uniaxially stressed germanium
1977
A plasma resonance study of valley transfer in (001) Si inversion layers
1981 StandoutNobel
Semiconducting and other major properties of gallium arsenide
1982 Standout
Electron drift velocity in silicon
1975
Raman linewidths of optical phonons in3 C − S i C
1999
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Effects of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp
1973
An observation by photoconductivity of strain splitting of shallow bulk donors located near to the surface in silicon mos devices
1976 StandoutNobel
Topological insulators with inversion symmetry
2007 Standout
Band Structure of Bismuth: Pseudopotential Approach
1968
Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple-quantum-well structures
1988 StandoutNobel
Electronic Band Structure of Arsenic. I. Pseudopotential Approach
1965
Thermal Expansion of Silicon and Zinc Oxide (I)
1969
Infrared detectors: status and trends
2003 Standout
Deformation Potentials in Silicon. I. Uniaxial Strain
1962
E 0+Δ0 transitions in GaSb/AlSb quantum wells
1987 StandoutNobel
Ground-state and electronic properties of covalent solids
1988
Phonons and related crystal properties from density-functional perturbation theory
2001 Standout
Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium
1966
Effects of interband excitations on Raman phonons in heavily dopedn − Si
1978
Determination of the Deformation-Potential Constant of the Conduction Band of Silicon from the Piezospectroscopy of Donors
1972
The Fermi surface. I. s-block and p-block metals
1969
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
1995 StandoutNobel
Electron Mobility and Drag Effect in p-Type Silicon
1985 StandoutNobel
Location of the Valence-Band Maximum in Bismuth
1968
Analysis of a highly sensitive silicon gyroscope with cantilever beam as vibrating mass
1996
Micromachined inertial sensors
1998 Standout
Quality of AlAs-like and InSb-like interfaces in InAs/AlSb superlattices: An optical study
1993 StandoutNobel
Magnetic focusing of electrons and holes in bismuth
1974 StandoutNobel
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
1993 Standout
Magnetoluminescence of the electron-hole liquid in germanium
1979 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout
Works of John J. Hall being referenced
Transport Properties and Band Structure in Bismuth, Antimony and their Alloys
1964
Low-Temperature Transport in "Splitp
1960
Large-Strain Dependence of the Acceptor Binding Energy in Germanium
1962
Electronic Effects in the Elastic Constants ofn
1967