Citation Impact

Citing Papers

Intrinsic carrier concentration and effective masses in InAs1−xSbx
1989
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Convergence of multi-valley bands as the electronic origin of high thermoelectric performance in CoSb3 skutterudites
2015
Convergence of electronic bands for high performance bulk thermoelectrics
2011 StandoutNature
Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
2003 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Organic Azides: An Exploding Diversity of a Unique Class of Compounds
2005 Standout
Enhancement of conduction-band effective mass in III–V semiconductor alloys induced by chemical disorder
1996
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
2000 StandoutScience
Study of the long-wavelength optic phonons inGa1−xAlxSb
1975
Alloyed Thermoelectric PbTe–SnTe Films Formed via Aerosol Deposition
2019
Molecular coherent-potential approximation for zinc-blende pseudobinary alloys
1987
Band structure of semiconductor alloys
1988
Optical detection of conduction-electron spin resonance in GaAs,Ga1−xInxAs, andGa1−xAlxAs
1977
Electroreflectance and Band Structure ofGaxIn1−xPAlloys
1972
Dynamical aspects of luminescence from GaAs-AlAs single quantum wells under hydrostatic pressure
1989 StandoutNobel
Far infrared magneto-optics of InAs1-xPxalloys under hydrostatic pressure
1987
Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
1977 Nobel
Energy gap variation in GaAsxSb1-x alloys
1970
Cyclotron resonance in n-type In1−xGaxAsyP1−y
1979 StandoutNobel
Nanostructured Thermoelectrics: The New Paradigm?
2009
Towards the high-throughput synthesis of bulk materials: thermoelectric PbTe–PbSe–SnTe–SnSe alloys
2019
Nucleophilic ring opening of aziridines
2004
Special quasirandom structures
1990 Standout
Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide
1980
LO-phonon oscillations and electron freeze-out in transport through In-InP and Sn-InP contacts
1987 StandoutNobel
Observation of Superlattice Effects on the Electronic Bands of Multilayer Heterostructures
1981 Nobel
Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4-μm optoelectronic device applications
1987
Composition dependence of the spin-orbit splittings in lattice-matched quaternary alloys: Generalized Van Vechten-Berolo-Woolley model
1983
Spintronics: Fundamentals and applications
2004 Standout
Electronic structure of III-V semiconductors and alloys using simple orbitals
1980
Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theory
1986
A comprehensive review of ZnO materials and devices
2005 Standout
Electronic structure of pseudobinary semiconductor alloys InxGa1−x and InAsxSb1−x
1995
Growth and properties of liquid-phase epitaxial GaAs1−xSbx
1977
Heat-capacity study of two-dimensional electrons in GaAs/AlxGa1−xAs multiple-quantum-well structures in high magnetic fields: Spin-split Landau levels
1992 StandoutNobel
Hysteretic (bistable) cyclotron resonance in semiconductors
1984
Electroluminescence from heterostructures of poly(phenylene vinylene) and inorganic CdSe nanocrystals
1998 StandoutNobel
Optical properties ofIn1−xGaxAsyP1−yfrom 1.5 to 6.0 eV determined by spectroscopic ellipsometry
1982
Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients
1973
Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP
1980
Modulated photoabsorption in strainedGa1−xInxAs/GaAs multiple quantum wells
1991 StandoutNobel
k→·p→perturbation theory in semiconductor alloys
1974
Refractive index of Ga1−xAlxAs
1974
Transport parameters of n-type GaSb
1984
Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
1976 Standout
Band Structure of Ga1−xInxAs
1976
Magnetophonon Effect and Energy Band Parameters of InP
1985
Advanced Thermoelectric Design: From Materials and Structures to Devices
2020 Standout
Thermoelectric Properties of Stoichiometric Compounds in the (SnTe)x(Bi2Te3)y System
2012
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures
2000 StandoutNobel
Stability of the wurtzite-type structure under high pressure: GaN and InN
1994 StandoutNobel
Electronic Structures of Semiconductor Alloys
1970
First-principles calculation of alloy phase diagrams: The renormalized-interaction approach
1989
Type II heterojunctions in the GaInAsSb/GaSb system
1994
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
1999 StandoutNobel
Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy
1990
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Model for the Electronic Structure of Amorphous Semiconductors
1975 Standout
Pressure-induced phase transition in SiC
1993 StandoutNobel
Electroreflectance and Wavelength Modulation Study of the Direct and Indirect Fundamental Transition Region of In1−xGaxP
1976
Temperature dependence of the interband critical-point parameters of InP
1987
Temperature and pressure dependence of the Γ1celectron mobility in GaSb
1973
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
X-ray observation of the structural phase transition of aluminum nitride under high pressure
1992 StandoutNobel
Temperature dependence of the dielectric function and the interband critical-point parameters ofAlxGa1−xAs
1991
Spin-Orbit Splitting in Compositionally Disordered Semiconductors
1972
Spin-orbit splitting in crystalline and compositionally disordered semiconductors
1977
Evidence for a reduction in the momentum matrix element P2due to alloy disorder in InAp1-xPx
1979
Electrical Properties of n-Type Cd1-xMgxTe
1969
Electron transport and band structure ofGa1−xAlxAsalloys
1980
Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1−xAsandGaAsxSb1−xalloys
1989
Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide
2001 StandoutScience
Ordering-induced band-gap reduction inInAs1−xSbx(x≊0.4) alloys and superlattices
1992
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Nonexistence of localized band tail states in substitutional semiconductor alloys and some other disordered systems
1972
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
1999 StandoutNobel
Midwave (4 μm) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions
1994
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Electronic structure of ZnS, ZnSe, ZnTe, and their pseudobinary alloys
1987
Photoluminescence of Ge-doped AlxGa1−xAs
1981
Free-exciton transitions in the optical absorption spectra ofGaAs1−xPx
1976
Heterojunction band offsets and effective masses in III-V quaternary alloys
1991
Advances in thermoelectric materials research: Looking back and moving forward
2017 StandoutScience
Electronic structure of pseudobinary semiconductor alloysAlxGa1−xAs,GaPxAs1−x, andGaxIn1−xP
1981
Semiconductor superlattices in high magnetic fields
1979 Nobel
Photoluminescence of AlxGa1-xAs near the Γ-X crossover
1987
Electron transport and energy-band structure of InSb
1991
Electronic properties of random alloys: Special quasirandom structures
1990 Standout
Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
1990 StandoutNobel
Rationally Designing High-Performance Bulk Thermoelectric Materials
2016 Standout
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Preparation and optical properties of Ga1−xInxN thin films
1975
Absorption edge of InPxAs1−x mixed crystals
1976
Effect of disorder-induced band mixing on the conduction-band effective mass of InAlGaAs alloys lattice matched to InP
1996
Excited states of the Zn and C acceptors inAl0.47Ga0.53As
1983
Refractive index of AlxGa1−xAs between 1.2 and 1.8 eV
1974
Energy bands of ternary alloy semiconductors: Coherent-potential-approximation calculations
1983
Gap Variation in Semiconductor Alloys and the Coherent-Potential Approximation
1978
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
1995 StandoutNobel
Electronic energy levels inGa1−xAlxSballoys
1975
The physics and technology of gallium antimonide: An emerging optoelectronic material
1997
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Energy band structure of AlxGa1-xAs
1977
Single-mode behavior ofAlSb1−xAsxalloys
1992 StandoutNobel
Microtesla MRI with a superconducting quantum interference device
2004 StandoutNobel
Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
1998 StandoutNobel
Novel approach to the calculation of instability regions in GaInAsSb alloys
2000
Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb
1998
Electroreflectance Spectra of AlxIn1−xSb Alloys
1974
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Γ1conduction electrongfactor and matrix elements in GaAs andAlxGa1−xAsalloys
1976
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
1993
Electroreflectance study of InGaAsP quaternary alloys lattice matched to InP
1981
Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds
1995
Interband transitions in molecular-beam-epitaxial AlxGa1−xAs/GaAs
1985
Fundamental Energy Gaps of AlAs and Alp from Photoluminescence Excitation Spectra
1973
Organometallic Synthesis and Spectroscopic Characterization of Manganese-Doped CdSe Nanocrystals
2000 StandoutNobel
Direct-energy-gap dependence on Al concentration inAlxGa1−xAs
1988
High-field cyclotron resonance in the conduction bands of GaSb and effective-mass parameters at theLpoints
1998
Electron Spin Resonance onGaAs−AlxGa1−xAsHeterostructures
1983 StandoutNobel
Liquid phase epitaxy and characterization of InAs1- x - ySb x P y on (100) InAs
1992
Observation of a Relativistic, Bistable Hysteresis in the Cyclotron Motion of a Single Electron
1985 StandoutNobel
Negative spin-orbit bowing in semiconductor alloys
1989
Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of x
1987
Interband critical points of GaAs and their temperature dependence
1987
Structural Origin of Optical Bowing in Semiconductor Alloys
1983
Diluted magnetic semiconductors
1988 Standout
Energy band-gap bowing parameter in an AlxGa1−x N alloy
1987 StandoutNobel
Effect of hydrostatic pressure and alloy composition on sulfur- and selenium-related impurity states in heavily dopedn-typeGaxIn1−xSb
1986
First-principles calculation of temperature-composition phase diagrams of semiconductor alloys
1990
InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films
1993 StandoutNobel
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Two-dimensional electronic structure in InAs-GaSb superlattices
1978 Nobel
k→·p→perturbation theory in III-V compounds and alloys: a reexamination
1977
Calculation of energy band gaps in quaternary iii/v alloys
1981
Electronic properties of two-dimensional systems
1982 Standout
Infrared reflectivity studies of gax in1-x asy p1-y quaternary compounds
1981
Energy Band Structure of In1‐xGaxAsyP1‐y Lattice Matched to InP by Means of the Line Profile Analysis of the Electroreflectance Spectra
1985
Effects of Chemical and Structural Disorder in Semiconducting Pseudobinary Alloys
1984
Valence-band structures of III-V compounds and alloys—Bond-orbital and coherent-potential approximations
1978

Works of John C. Woolley being referenced

Electron transport and conduction band structure of GaSb
1981
Electroreflectance of InAs
1968
Nernst–Ettingshausen Effects in GaxIn1–xAs alloys
1973
Reflectance spectra of some III–V compounds in the vacuum ultraviolet
1968
Phase studies of the Pb1−xSnxTe alloys
1967
Electroreflectance Spectra of AlxGa1−xAs Alloys
1971
Conduction bands of GaxIn1–x Sb alloys
1969
Free-carrier Faraday rotation in InAsxSb1−x alloys
1968
Conduction Band Parameters in GaSb from High-Temperature Transport Measurements
1972
Electrical properties of InAsxSb1−x alloys
1968
Conduction bands of GaSb
1969
Electroreflectance measurements in mixed III–V alloys
1969
Electron effective-mass values in GaxIn1−xSb alloys
1969
Solid solution and lattice parameter values in the (Cd1−xMnx(Te1−ySey) diagram
1985
Investigation of Two‐ and Three‐Phase Fields in the Ga‐As‐Sb System
1980
Electron effective mass values in GaAsxSb1−x alloys
1981
Optical Properties of SomePb1−xSnxTeAlloys Determined from Infrared Plasma Reflectivity Measurements
1972
Electron scattering in InAsxSb1−x alloys
1968
Effect of Disorder on the Conduction-Band Effective Mass, Valence-Band Spin-Orbit Splitting, and the Direct Band Gap in III-V Alloys
1973
Conduction bands of GaxIn1−xAs and InAsxSb1−xalloys
1970
Plasma Edge Reflectance Measurements in GaxIn(1−x)As and InAsxSb(1−x) Alloys
1971
Phase diagram and lattice parameter data for the GaAsySb1−y system
1973
Electrical Transport Properties of Ga(AsxSb1−x) and (GaxIn1−x)Sb Alloys under Hydrostatic Pressure
1975
Optical energy gap variation in GaxIn1−x As alloys
1968
The synthesis of β-N-tosylamino hydroxylamines via the ring opening of N-tosylaziridines and their use in reverse Cope cyclisations
2001
Electrical transport and energy-band structure in InAs
1982
Phase studies of the Pb1−xSnxSe alloys
1968
Rankless by CCL
2026