Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Performance and design of InGaAs/InP photodiodes for single-photon counting at 155 µm
2000
Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
2010 Nature
Mixed Transition‐Metal Oxides: Design, Synthesis, and Energy‐Related Applications
2014 Standout
Leakage Current Characteristics of Lead-Zirconate-Titanate Thin Film Capacitors for Memory Device Applications
1998
Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD
2000
Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals
2001 StandoutNobel
Physics of thin-film ferroelectric oxides
2005 Standout
Luminescence properties of defects in GaN
2005 Standout
A comprehensive review of ZnO materials and devices
2005 Standout
Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
2008 StandoutNobel
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
1999
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Ultrafast carrier relaxation in GaN,In 0.05 Ga 0.95 N , In 0.07 Ga 0.93 N / In 0.12 Ga 0.88 N
2003
Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
2000 StandoutNobel
Improvement of Low-Intensity Ultraviolet Photodetectors Based on AlGaN with Low Threading Dislocation Density
1999 StandoutNobel
GaN-Based p–n Junction Blue-Light-Emitting Devices
2013 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Demonstration of a low-noise near-infrared photon counter with multiphoton discrimination
2003 StandoutNobel
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Detailed feasibility study on a flame detector using AlGaN photosensors
2000 Nobel
Single-photon detectors for optical quantum information applications
2009 Standout
Electroluminescence efficiency of (1\,0\,\bar{1}\,0) -oriented InGaN-based light-emitting diodes at low temperature
2008 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Deep-ultraviolet light-emitting diodes for frequency domain measurements of fluorescence lifetime in basic biofluorophores
2005
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Dielectric breakdown in high-ε films for ULSI DRAMs
1993
Additional phonon modes and close satellite valleys crucialfor electron transport in hexagonal gallium nitride
2004
Low-Intensity Ultraviolet Photodetectors Based on AlGaN
1999 StandoutNobel
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
2006 StandoutNobel
Low noise p-π-n GaN ultraviolet photodetectors
1997
Deep acceptors in undoped GaN
1999
Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
2007 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
2000
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
1999
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
2008 StandoutNobel
GaN: Processing, defects, and devices
1999
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Ferroelectric thin films: Review of materials, properties, and applications
2006 Standout
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
Electrogenerated Chemiluminescence and Its Biorelated Applications
2008 Standout
A review of photodetectors for sensing light-emitting reporters in biological systems
2003
Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy
2006
Novel aspects of the growth of nitrides by MOVPE
2001 StandoutNobel
Optical waveguide simulations for the optimization of InGaN-based green laser diodes
2010 StandoutNobel
Gain mechanism in GaN Schottky ultraviolet detectors
2001
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Ordinary and extraordinary refractive indices for AlxGa1−xN epitaxial layers
1999
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition
1998
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
2008 StandoutNobel
III–Nitride UV Devices
2005
High-Detectivity GaN MSM Photodetectors with Low-Temperature GaN Cap Layers and Ir∕Pt Contact Electrodes
2007
Quantum cryptography
2002 Standout
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
2014 StandoutNobel
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
2016 Standout
Band parameters for nitrogen-containing semiconductors
2003 Standout
Nanowire Ultraviolet Photodetectors and Optical Switches
2002 Standout
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Lasing in direct-bandgap GeSn alloy grown on Si
2015 Standout
Frequency Spectra of Fatigue of PZT and other Ferroelectric Thin Films
1997
Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
2001
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
High gain GaN/AlGaN heterojunction phototransistor
1998
Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer
2001 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of John C. Carrano being referenced
Electrical and reliability properties of PZT thin films for ULSI DRAM applications
1991
Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film Capacitors
1990
Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors
1998
High quantum efficiency metal-semiconductor-metalultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
1997
Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN
1998
Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
1997
GaN avalanche photodiodes
2000
Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN
2000
Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode
1999
Improved detection of the invisible
1999
Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN
1998
Semiconductor ultraviolet optical sources for biological agent detection
2002
Low dark current pin ultraviolet photodetectorsfabricated on GaN grown bymetal organic chemical vapour deposition
1998
High-speed pin ultraviolet photodetectorsfabricated on GaN
1998