Citation Impact
Citing Papers
Mini-LED, Micro-LED and OLED displays: present status and future perspectives
2020 Standout
Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
2011 StandoutNobel
Red emission in B3+- and Li+-doped SrAl2O4:Eu3+ phosphor under UV excitation
2009
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Narrow-band red-emitting Sr[LiAl3N4]:Eu2+ as a next-generation LED-phosphor material
2014 Standout
Practical time‐gated luminescence flow cytometry. I: Concepts
2007
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010 StandoutNobel
Direct Z-scheme ZnO/CdS hierarchical photocatalyst for enhanced photocatalytic H2-production activity
2018
High Output Power 365 nm Ultraviolet Light Emitting Diode of GaN-Free Structure
2002
Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE
2004 StandoutNobel
g‐C3N4‐Based Heterostructured Photocatalysts
2017 Standout
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2005
Polarization-engineered removal of buffer leakage for GaN transistors
2010
Ultraviolet AlGaN multiple-quantum-well laser diodes
2003
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
Lanthanide Luminescence for Biomedical Analyses and Imaging
2010 Standout
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition
2011 StandoutNobel
Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
2012 StandoutNobel
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
2011
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes
2004
Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
2011 StandoutNobel
GaN-on-Si Power Technology: Devices and Applications
2017 Standout
Copper and platinum doped titania for photocatalytic reduction of carbon dioxide
2017
Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates
2006
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Emerging Two-Dimensional Nanomaterials for Electrocatalysis
2018 Standout
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Ce3+-Doped garnet phosphors: composition modification, luminescence properties and applications
2016 Standout
Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut
2015 Standout
Nonpolara-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
2011 StandoutNobel
S-Scheme Heterojunction Photocatalyst
2020 Standout
High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm
2004
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
2007 StandoutNobel
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications
2006
Luminescent Properties of (Sr, Zn)Al2O4:Eu2+,B3+ Particles as a Potential Green Phosphor for UV LEDs
2006
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
ZnS@g-C3N4 Composite Photocatalysts: In Situ Synthesis and Enhanced Visible-Light Photocatalytic Activity
2016
350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
2004 StandoutNobel
UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology
2005 StandoutNobel
Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
2012 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
2006
Luminescence enhancement of Eu-doped calcium magnesium silicate blue phosphor for UV-LED application
2009
Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment
2004
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
2007 StandoutNobel
Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor
2015
Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes
2003
Heteroatom‐Doped Carbonaceous Photocatalysts for Solar Fuel Production and Environmental Remediation
2017
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Cocatalysts for Selective Photoreduction of CO2into Solar Fuels
2019 Standout
Ultrathin Two‐Dimensional Multinary Layered Metal Chalcogenide Nanomaterials
2017
Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping
2003
Internal quantum efficiency in AlGaN with strong carrier localization
2012
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes
2011 StandoutNobel
Exciton hopping inIn x Ga 1 − x N
2005
III–Nitride UV Devices
2005
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
Novel UV devices on high-quality AlGaN using grooved underlying layer
2009 StandoutNobel
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
A Survey of Wide Bandgap Power Semiconductor Devices
2013 Standout
365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
2003
X-ray diffraction of III-nitrides
2009
Tuning the Optical Properties of Cesium Lead Halide Perovskite Nanocrystals by Anion Exchange Reactions
2015 Standout
Nitride micro-LEDs and beyond - a decade progress review
2013
Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
2013 StandoutNobel
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2014 Standout
Works of Jin‐Ping Ao being referenced
AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers
2003
Highly improved performance of a 350nm ultraviolet light-emitting diode containing AlxGa1−xN/AlyGa1−yN distributed Bragg reflectors
2004
Fabrication of C3N4 ultrathin flakes by mechanical grind method with enhanced photocatalysis and photoelectrochemical performance
2016
1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
2002
Copper gate AlGaN/GaN HEMT with low gate leakage current
2003
Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes
2005
Control the energy band potential of ZnMgO solid solution with enhanced photocatalytic hydrogen evolution capacity
2017
Graphene quantum dot modified g-C3N4 for enhanced photocatalytic oxidation of ammonia performance
2017
Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors
2017
Low-temperature chemical synthesis of rutile and anatase mixed phase TiO2 nanostructures for DSSCs photoanodes
2017
Monolithic Blue LED Series Arrays for High-Voltage AC Operation
2002
Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
2002
High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
2002
Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors
2013