Citation Impact
Citing Papers
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Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors
1994
Parasitic bipolar gain in fully depleted n-channel SOI MOSFET's
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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
2000
Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors
1996
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Band offsets of wide-band-gap oxides and implications for future electronic devices
2000 Standout
Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy
2000
On the narrow-emitter effect of advanced shallow-profile bipolar transistors
1988
Fabrication of ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance using pattern-constrained epitaxy
1997
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
2002
Moore's law: the future of Si microelectronics
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High dielectric constant gate oxides for metal oxide Si transistors
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Dielectric-Barrier Discharges: Their History, Discharge Physics, and Industrial Applications
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Low dielectric constant materials for microelectronics
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Pseudopotential study of PrO2 and HfO2 in fluorite phase
2001
Epitaxial oxides on silicon grown by molecular beam epitaxy
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MOS device modeling at 77 K
1989
Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
1996
Electroless deposition of NiWB alloy on p-type Si(100) for NiSi contact metallization
2009
Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors
2007
Epitaxial oxide thin films on Si(001)
2000
On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations
1993
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
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On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues
1993
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Carbon Electrodes for K-Ion Batteries
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Metal–Oxide RRAM
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Fundamentals of Modern VLSI Devices
2009 Standout
Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/
2001
Radiation Effects in MOS Oxides
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Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides
2004 StandoutNobel
A review and analysis of microwave absorption in polymer composites filled with carbonaceous particles
2012 Standout
Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors
1995 StandoutNobel
The Poole-Frenkel effect in 6H-SiC diode characteristics
1994
Vaporization thermodynamics and heat capacities of Cr3Ge and Cr5Ge3
2001 StandoutNobel
Perovskite lead-free dielectrics for energy storage applications
2018 Standout
High-κ gate dielectrics: Current status and materials properties considerations
2001 Standout
The reduction of graphene oxide
2011 Standout
Scaling the Si metal-oxide-semiconductor field-effect transistor into the 0.1-μm regime using vertical doping engineering
1991
Properties of Ta–Mo alloy gate electrode for n-MOSFET
2005
Invited Review Article: Single-photon sources and detectors
2011 Standout
Characteristics of ZrO2 gate dielectric deposited using Zr t–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
2002
Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
2000
Works of J.C.S. Woo being referenced
Non-ideal base current in bipolar transistors at low temperatures
1987
Rapid thermal oxidation of GeSi strained layers
1990
Two-dimensional analytic modeling of very thin SOI MOSFETs
1990
Ammonium Hydroxide Effect on Low-Temperature Wafer Bonding Energy Enhancement
2005
Rapid isothermal processing of strained GeSi layers
1992
Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation
2002
Salicidation process using NiSi and its device application
1997
Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
1991
Optimization of silicon bipolar transistors for high current gain at low temperatures
1988
Short-channel effects in MOSFET's at liquid-Nitrogen temperature
1986
Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. II. Quantitative analysis
2002
Mobility-field behavior of fully depleted SOI MOSFET's
1994
Sub-quarter-micrometer CMOS on ultrathin (400 AA) SOI
1992
The effect of traps on the performance of graphene field-effect transistors
2010
Interface properties of thin oxides grown on strained GexSi1−x layer
1994
Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides
2005
High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si
1993
The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs
1999
High-gain lateral bipolar action in a MOSFET structure
1991