Citation Impact
Citing Papers
Epitaxial core–shell and core–multishell nanowire heterostructures
2002 StandoutNature
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Graphene transistors
2010 Standout
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
2015 StandoutNature
Black phosphorus field-effect transistors
2014 Standout
Quantum imaging with undetected photons
2014 StandoutNatureNobel
Plasmonics for extreme light concentration and manipulation
2010 Standout
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
2010 Nature
Materials for terahertz science and technology
2002 Standout
Negative differential mobility of electrons in germanium: A Monte Carlo calculation of the distribution function, drift velocity and carrier population in the (111) and (100) minima
1971
Disordered electronic systems
1985 Standout
Substrate bias effects on subband separation and interband scattering in Si (110) p-channel mosfets
1981
Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentration
1981 StandoutNobel
Spin glasses: Experimental facts, theoretical concepts, and open questions
1986 Standout
Picosecond microwave pulses generated with a subpicosecond laser-driven semiconductor switch
1981 StandoutNobel
Studies of anomalous diffusion of impurities in silicon
1966
Polarizabilities of shallow donors in silicon
1974
Photothermal Effect in Semiconductors
1961
Picosecond GaAs-based photoconductive optoelectronic detectors
1989 StandoutNobel
Electron tunneling and contact resistance of metal-silicon contact barriers
1970
Engineering infrared emission properties of silicon in the near field and the far field
2004
Orientation dependence of the diffusion of boron in silicon
1971
Solar Water Splitting Cells
2010 Standout
Freeze-out effects on n-channel MOSFET's
1976
Picosecond microwave pulse generation
1981 StandoutNobel
Electron mobility and free-carrier absorption in InP; determination of the compensation ratio
1980
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
Free Carrier Absorption in Silicon
1978
Photoluminescence of lattice-matched In1−xGaxP1−yAsy layers on GaAs
1980 StandoutNobel
Point defects and dopant diffusion in silicon
1989 Standout
Large-signal analysis of a silicon Read diode oscillator
1969 Standout
Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis inn
1973
Resistivity and mobility of GaP at 300 K
1983
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
1983 Standout
Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET
1974
Photovoltaic measurement of bandgap narrowing in moderately doped silicon
1983
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Electrical properties and conduction mechanisms of Ru-based thick-film (cermet) resistors
1977
Two-Dimensional Magnetotransport in the Extreme Quantum Limit
1982 StandoutNobel
Heterostructure bipolar transistors and integrated circuits
1982 StandoutNobel
Optical study of interacting donors in semiconductors
1981
Near-field photoconductivity: Application to carrier transport in InGaAsP quantum well lasers
1994 StandoutNobel
Effect of oxidation on orientation-dependent boron diffusion in silicon
1973
Opening the terahertz window with integrated diode circuits
2005
Electron mobility and energy gap of In0.53Ga0.47As on InP substrate
1976
Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures
1981
Fundamental limitations in microelectronics—I. MOS technology
1972
Semiconducting and other major properties of gallium arsenide
1982 Standout
Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
1984 Standout
Electroreflectance of p-type GaAs
1969
Schottky barrier heights of metals contacting to p-ZnSe
1997 StandoutNobel
Picosecond electro-optic sampling system
1982 StandoutNobel
Measurements on the photoconductive lifetime of carriers in GaAs by optoelectronic gating technique
1977 StandoutNobel
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
Magnetic pyrochlore oxides
2010 Standout
Indication for dominating surface absorption in crystalline silicon test masses at 1550 nm
2013
Semiconductor Material and Device Characterization
2005 Standout
The k.p interaction in InP and GaAs from the band-gap dependence of the effective mass
1984
Band‐to‐Band Radiative Recombination in Groups IV, VI, and III‐V Semiconductors (I)
1967
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
1983
Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa)As
1984 StandoutNobel
Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratio
1979
Radiative Processes in Direct and Indirect Band Gap In1−xGaxP
1971
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
New Phenomenon in Semiconductor Junctions—GaAs Duplex Diodes
1970 StandoutNobel
Interface properties of oxidized germanium-doped silicon
1973
Magnetic susceptibility of doped polyacetylene
1979 StandoutNobel
Measurements of bandgap narrowing in Si bipolar transistors
1976
Active pulse shaping in the picosecond domain
1979 StandoutNobel
Absorption measurements at high pressure on AlAs-AlxGa1−xAs-GaAs superlattices
1982
Molecular beam epitaxial growth of GaP on Si
1984 StandoutNobel
A review of some charge transport properties of silicon
1977
Free-Energy Dependence of Electron-Transfer Rate Constants at Si/Liquid Interfaces
1997
A unified mobility model for device simulation—I. Model equations and concentration dependence
1992
Lattice parameter study of silicon uniformly doped with boron and phosphorus
1974
Carrier mobilities in silicon empirically related to doping and field
1967 Standout
Minority Carrier Transport in Lead Sulfide Quantum Dot Photovoltaics
2017 StandoutNobel
Low-temperature magnetic susceptibility of Si: P in the nonmetallic region
1981
A Molecular Shift Register Based on Electron Transfer
1988 StandoutScienceNobel
Effect of a Transmission Line Resonator on a Small Capacitance Tunnel Junction
1994 StandoutNobel
High-power switching with picosecond precision
1979 StandoutNobel
Mössbauer effect and lattice parameter for silicon doped with antimony
1971
Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET
1974
Dependence of the direct energy gap of GaAs on hydrostatic pressure
1975
Band mass anisotropy and the intrinsic metric of fractional quantum Hall systems
2012 StandoutNobel
Terahertz technology
2002 Standout
Charge collection scanning electron microscopy
1982
Cutting-edge terahertz technology
2007 Standout
The effect of oxidation on the diffusion of phosphorus in silicon
1979
The doped Si/SiO2 interface
1981
Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Dopedn
1973
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
The lattice contraction coefficient of boron and phosphorus in silicon
1972
A silicon-based nuclear spin quantum computer
1998 StandoutNature
Measuring and modeling minority carrier transport in heavily doped silicon
1985
Dielectric Anomaly and the Metal-Insulator Transition inn
1975
Cyclotron resonance and Hall measurements on the hole carriers in GaAs
1971
Picosecond optoelectronic switching in GaAs
1977
Electric field dependence of optical absorption near the band gap of quantum-well structures
1985 Standout
Monte Carlo calculation of microwave and far-infrared hot-carrier mobility in N-Si: Efficiency of millimeter transit-time oscillators
1978
Electronic properties of two-dimensional systems
1982 Standout
Works of J.C. Irvin being referenced
Visible Light from a Germanium Reverse Biased p-n Junction
1959
Resistivity of Bulk Silicon and of Diffused Layers in Silicon
1962
Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
1968
Millimeter frequency conversion using Au-n-type GaAs Schottky barrier epitaxial diodes with a novel contacting technique
1965
Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping
1968
Correlation of the Physical Location of Crystal Defects with Electrical Imperfections in GaAs p-n Junctions
1968
Effect of Hydrostatic Pressure on p-n Junction Characteristics and the Pressure Variation of the Band Gap
1967
1968