Standout Papers
Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Growth and applications of Group III-nitrides
1998
Properties and applications of MBE grown AlGaN
1997
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
2001 StandoutNobel
Temperature quenching of photoluminescence intensities in undoped and doped GaN
1999
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Device Applications of Side-Chain Ferroelectric Liquid Crystalline Polymer Films
1996 Science
Picosecond GaAs-based photoconductive optoelectronic detectors
1989 StandoutNobel
Novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping and one-dimensional simulation of charge control
1997
A planar-doped 2D-hole gas base AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy
1988
Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates
1999
Luminescence properties of defects in GaN
2005 Standout
Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
2001
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
2007 StandoutNobel
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
1999
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
1999
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors
1997
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Photoinduced Motions in Azo-Containing Polymers
2002 Standout
Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE
2003 StandoutNobel
Charge redistribution at GaN–Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces
2000 StandoutNobel
Hot electron transport in AlN
2000 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs
1989 StandoutNobel
Electron mobility in modulation-doped AlGaN–GaN heterostructures
1999
Synthesis and Polymerization of Liquid Crystalline Donor−Acceptor Monomers
1996
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
0.12-μm gate III-V nitride HFET's with high contact resistances
1997
Evidence for localized Si-donor state and its metastable properties in AlGaN
1999 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
A Novel Aqueous Process for Preparation of Crystal Form-Controlled and Highly Crystalline BiVO4 Powder from Layered Vanadates at Room Temperature and Its Photocatalytic and Photophysical Properties
1999 Standout
Transient electron transport in wurtzite GaN, InN, and AlN
1999
An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances
1997 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Piezoelectric charge densities in AlGaN/GaN HFETs
1997
High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts
1998
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
1997
Quantitative analysis of nanoscale electronic properties in an AlxGa1−xN/GaN heterostructure field-effect transistor structure
2001
GaN: Processing, defects, and devices
1999
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
GaAs/(In,Ga)As, p-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain current
1988
Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
1998
Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
1999
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2000
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Lateral variations in threshold voltage of an AlxGa1−xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy
2001
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Dislocation mediated surface morphology of GaN
1999
Low field electron mobility in GaN
1999
Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching with Hot Phosphoric Acid
2001 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures
1999
Nanoscale thermal transport
2003 Standout
Oxidation study of GaN using x-ray photoemission spectroscopy
1999
Electrical effects of plasma damage in p-GaN
1999
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures
2001 StandoutNobel
Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
1999
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Microwave performance of 0.25 µm doped channelGaN/AlGaN heterostructure field effect transistor at elevated temperatures
1997
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Command surfaces, 20. Fixation of surface‐assisted homogeneous alignment of nematic liquid crystals by cationic photopolymerization
1996
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Schottky barrier engineering in III–V nitrides via the piezoelectric effect
1998
Logic Gates and Computation from Assembled Nanowire Building Blocks
2001 StandoutScience
Fabrication and characterization of GaN FETs
1997
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Hyperbranched polymers: from synthesis to applications
2004 Standout
Monte Carlo particle modelling of small semiconductor devices
1982
Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
1997
Epitaxially-grown GaN junction field effect transistors
2000
Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors
1988 StandoutNobel
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of J.A. Higgins being referenced
Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency
1996
35-GHz performance of single and quadruple power heterojunction HEMT's
1986
High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
1998
Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
1996
High-power 10-GHz operation of AlGaN HFET's on insulating SiC
1998
Modeling the influence of carrier profiles on MESFET characteristics
1980
GaN based heterostructure for high power devices
1997
CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
1996
Anisotropic networks obtained by in situ cationic polymerization of liquid-crystalline divinyl ethers
1993
AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process
1987
Fast switching anisotropic networks obtained byin situphotopolymerization of liquid crystal molecules
1992