Citation Impact
Citing Papers
The silver halide photographic process
1988
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Interpretative strategies for lung function tests
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Shape‐Controlled Synthesis of Metal Nanocrystals: Simple Chemistry Meets Complex Physics?
2008 Standout
Optical signatures of dopants in GaN
2006 StandoutNobel
Metastability of the Isolated Arsenic-Antisite Defect in GaAs
1988
Noncontact characterization of CdTe doped with V or Ti
1996
Theory of native defects, doping and diffusion in diamond and silicon carbide
1992 StandoutNobel
Upconversion and Anti-Stokes Processes with f and d Ions in Solids
2003 Standout
High dielectric constant oxides
2004 Standout
First-principles calculations for point defects in solids
2014 Standout
Elastic constants of III - V compound semiconductors: modification of Keyes' relation
1996
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
1996 Standout
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
First‐principles study on elastic properties and phase stability of III–V compounds
2003
Avalanche photodiodes and quenching circuits for single-photon detection
1996 Standout
Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures
1989
Isolated arsenic-antisite defect in GaAs and the properties ofEL2
1989
Surface photovoltage phenomena: theory, experiment, and applications
1999 Standout
High-speed photodetector applications of GaAs and InxGa1−xAs/GaAs grown by low-temperature molecular beam epitaxy
1993 StandoutNobel
Photoluminescence of GaN: Effect of electron irradiation
1998 StandoutNobel
Spectral-line-broadening study of the trivalent lanthanide-ion series.II. The variation of the electron-phonon coupling strength through the series
1997
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Theory of positrons in solids and on solid surfaces
1994 Standout
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Upconversion fluorescence spectroscopy of Er3+ pairs in CsCdBr3 a
1989
Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation ofEL 2
1988
Metal-semiconductor contacts: electronic properties
1994
Organo Lanthanide Metal Complexes for Electroluminescent Materials
2002 Standout
1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy
1985
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Chemical profile and magnetoresistance ofGa 1 − x Mn x As Ga 1 − x Mn x As
2005 StandoutNobel
Recent advances and applications of machine learning in solid-state materials science
2019 Standout
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
Irradiation-induced defects in GaAs
1985 Standout
Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAs
1985
Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAs
1984
Band offsets of wide-band-gap oxides and implications for future electronic devices
2000 Standout
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Mechanical hardness: A semiempirical theory based on screened electrostatics and elastic shear
1998
Study of structural, elastic and electronic properties of GdX (X = Bi, Sb) compounds using LSDA and LSDA +U approach
2011
Actinide-activated luminescence in uranium-implanted III-V semiconductors
1990
Reduced Transition Metal Colloids: A Novel Family of Reusable Catalysts?
2002 Standout
Optical Properties of As-Antisite andEL 2
1984
Interpretation of europium(III) spectra
2015 Standout
Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si
1995 StandoutNobel
Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAs
1984
Formation energies, abundances, and the electronic structure of native defects in cubic SiC
1988 StandoutNobel
Metastable vacancy in theEL2 defect in GaAs studied by positron-annihilation spectroscopies
1994
Infrared-to-ultraviolet photon-avalanche-pumped upconversion in Tm:LiYF_4
1993
Vacuum arc ion sources
1994 Standout
Chemistry and Properties of Nanocrystals of Different Shapes
2005 Standout
Identification of a defect in a semiconductor:EL2 in GaAs
1986 Standout
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Assessing the accuracy of hybrid functionals in the determination of defect levels: Application to the As antisite in GaAs
2011
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy
1993 StandoutNobel
Electronic structure and equilibrium properties ofGa x Al 1 − x
1993
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs
1993
Electronic structures of point defects in III-V compound semiconductors
1989
The role of Ga antisite defect in the activation process of transmuted impurities in neutron-transmutation-doped semi-insulating GaAs
1990
Theory of bulk moduli of hard solids
1988
Modeling hardness of polycrystalline materials and bulk metallic glasses
2011 Standout
Colloids and amorphous solids of Pr, Yb, and Er using 2-propanol and 2-butanone
2000
Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)
1994 StandoutNobel
Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers
1996 Standout
Electronic structure and bonding at SiC/AlN and SiC/BP interfaces
1991
Photoluminescence lifetime microscope spectrometer based on time-correlated single-photon counting with an avalanche diode detector
1990
Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates
1997 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces
1999 StandoutNobel
Dominant shallow acceptor enhanced by oxygen doping in GaN
2006 StandoutNobel
Theoretical study of the AlxGa1−xN alloys
2002
Works of J. Windscheif being referenced
Optical transitions ofEr 3 + F 3 F 3
1982
Photoresponse of the AsGa antisite defect in as-grown GaAs
1985
Elastic constants and refractive index of boron phosphide
1984
Relaxation of the indirect exciton in AgBr studied by resonant Raman scattering
1980
Zeeman analysis of the ytterbium luminescence in indium phosphide
1985
Optical transitions of Pr3+ and Er3+ ions in LiYF4
1980
Rare earth activated luminescence in InP, GaP and GaAs
1983
Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement
1991
Identification of AsGa antisites in plastically deformed GaAs
1982
Direct and fast comparison of near-infrared absorption and photoluminescence topography of semiinsulating GaAs wafers
1986