Citation Impact
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1986
Paramagnetic Resonance of Defects Introduced Near the Surface of Solids by Mechanical Damage
1961
Hall measurements as a function of temperature on monocrystalline SiC thin films
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2004 Standout
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1978
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A lateral microscopic growth model for heterogeneous impurity incorporation during Czochralski crystal growth
1980
Cleaning of AlN and GaN surfaces
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Schottky barrier diodes on 3C-SiC
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1989 StandoutNobel
Oxygen Adsorption on Silicon Surfaces Observed via Electron Spin Resonance
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Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure
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High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition
1984
Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition
1987 StandoutNobel
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1983
Pressure-induced phase transition in SiC
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Magnetic-Field-Induced Spin-Conserving and Spin-Flip Intersubband Transitions in InAs Quantum Wells
1995 StandoutNobel
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Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films
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High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films
1987 StandoutNobel
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1986
Prospects for device implementation of wide band gap semiconductors
1992
Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films
1988 StandoutNobel
Metal Schottky barrier contacts to alpha 6H-SiC
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Conduction electron spin resonance in magnesium
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1998 StandoutNobel
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1986
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Electroluminescence from a Mixed Red−Green−Blue Colloidal Quantum Dot Monolayer
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Behavior of ion-implanted junction diodes in 3C SiC
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Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001)
1986
Electrical properties of ion-implanted p-n junction diodes in β-SiC
1988 StandoutNobel
Defects in neutron irradiated SiC
1987 StandoutNobel
Microstructural, chemical, and electrical characterization of the beta silicon carbide thin-film silicon substrate interface
1985 StandoutNobel
Breakdown field in vapor-grown silicon carbide p-n junctions
1977
Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition
1986
Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
1997 StandoutNobel
Growth mechanism of 6H-SiC in step-controlled epitaxy
1993
Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor
1963 StandoutNobel
Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy
1994 StandoutNobel
Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces
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Fluorescence Resonance Energy Transfer Between Quantum Dot Donors and Dye-Labeled Protein Acceptors
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Works of J. W. Faust being referenced
Effect of growth parameters on habit and morphology of electrodeposited lead dendrites
1973
Growth of High-Purity Single Crystals of Magnesium
1972
Silicon Carbide—1973
1977
Study of the Orientation Dependent Etching and Initial Anodization of Si in Aqueous KOH
1983
A Structural Study of the Compound AgSbTe2
1960
The equation of state, amorphization, and high‐pressure phase diagram of muscovite
1994
The stability and equation of state of majoritic garnet synthesized from natural basalt at mantle conditions
1996
Study of the Etch‐Stop Mechanism in Silicon
1982
The Surface Chemistry of Metals and Semiconductors
1962
Effect of the Polarity of the III-V Intermetallic Compounds on Etching
1960
The growth of semiconductor crystals from solution using the twin-plane reentrant-edge mechanism
1964