J. Vasi

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics

Instability dependent upon bias and temperature stress in amorphous‐indium gallium zinc oxide (a‐IGZO) thin‐film transistors

Total ionizing dose effects in MOS oxides and devices

Thermally Stimulated Current Measurements on Irradiated MOS Capacitors

Embedded System Design

Electronic circuit reliability modeling

Worst-case bias during total dose irradiation of SOI transistors

Radiation Effects in MOS Oxides

Effects of post-stress hydrogen annealing on MOS oxides after /sup 60/Co irradiation or Fowler-Nordheim injection

Device degradation of n-channel poly-Si TFTs due to high-field, hot-carrier and radiation stressing

The nature of intrinsic hole traps in thermal silicon dioxide

Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitors

Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

A simulation of the multiple trapping model for continuous time random walk transport