Citation Impact

Citing Papers

2D transition metal dichalcogenides
2017 Standout
High-Tc superconducting materials for electric power applications
2001 StandoutNature
Electronic Structure of the Trilayer Cuprate SuperconductorBi2Sr2Ca2Cu3O10+δ
2002
Thallium solubility range in Tl2 –yBa2Can– 1CunO2n+ 4 –xsuperconductors
1994 StandoutNobel
Electrospray Ionization for Mass Spectrometry of Large Biomolecules
1989 StandoutScienceNobel
Al(As,Sb) heterobarriers on InAs: growth, structural properties and electrical transport
1998 StandoutNobel
Photoconductivity in insulatingYBa2Cu3O6+x: From Mott-Hubbard insulator to Fermi glass via oxygen doping
1993 StandoutNobel
Physics of thin-film ferroelectric oxides
2005 Standout
Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
1985 StandoutNobel
Measurement of compositional inhomogeneity of liquid phase epitaxial InGaPAs
1983
Proton Conductivity:  Materials and Applications
1996 Standout
Inhomogeneity of liquid-phase-epitaxial InGaAsP lattice matched on InP: Effects of transient growth
1984
Concerning the nature of high-Tcsuperconductivity: Survey of experimental properties and implications for interlayer coupling
1992
Special quasirandom structures
1990 Standout
Angle-resolved photoemission studies of the cuprate superconductors
2003 Standout
The pseudogap in high-temperature superconductors: an experimental survey
1999 Standout
Increased lateral oxidation rates of AllnAs on InP using short-period superlattices
2000 StandoutNobel
The formation of crystalline defects and crystal growth mechanism in In Ga1−N/GaN heterostructure grown by metalorganic vapor phase epitaxy
1998 StandoutNobel
Modulated photoabsorption in strainedGa1−xInxAs/GaAs multiple quantum wells
1991 StandoutNobel
Pinholes, Dislocations and Strain Relaxation in InGaN
1998 StandoutNobel
High-speed photodetector applications of GaAs and InxGa1−xAs/GaAs grown by low-temperature molecular beam epitaxy
1993 StandoutNobel
Advancing EDM through Fundamental Insight into the Process
2005 Standout
Experimental study of the spreading, due to substitution defects, of the first order transitions in the mixed system Pb3P2O 8-Pb3V2O8
1987
N- type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source
1988 StandoutNobel
Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructures
1986
Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices
1985
Optical investigation of highly strained InGaAs-GaAs multiple quantum wells
1987
Electrical determination of band offsets in a p-Ga0.77In0.23As0.20Sb0.80/ n-GaSb type-II heterojunction
1993
Phase formation in Bi,Pb(2223) tapes
2001
A proposal of a vacuum micro quantum interference transistor
1993
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
Growth and microstructure of InxGa1−xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy
2000 StandoutNobel
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
2003 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Structural Refinement of X-Ray Diffraction Profile for Artificial Superlattices
2000
InAs1−xSbx infrared detectors
1989
Photoluminescence of MBE-grown InAs1-xSbxlattice matched to GaSb
1993
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
1997 StandoutNobel
Ferroelastic Phase Transition of CsHSeO4
1982
Photoluminescence of AlInAs under hydrostatic pressure
1989
Electronic states and superconductivity in multilayer high-Tccuprates
2002
Infrared detectors: status and trends
2003 Standout
Growth of InAs1−xSbx (0<x<1) and InSb-InAsSb superlattices by molecular beam epitaxy
1985
Optically detected cyclotron resonance measurements in Al0.48In0.52As MBE layers
1989
High-Tcsuperconductors: Disordered metals with pairing via polarizability from localized states near the mobility edge
1993 StandoutNobel
Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy
1992
Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X‐ray diffraction monitoring during metalorganic vapor‐phase epitaxial growth
2013 StandoutNobel
Solid-state processing and phase development of bulk (MgO)w/BPSCCO high-temperature superconducting composite
1996
Domain-wall orientations in ferroelastics
1975 Standout
205Tl NMR in oxygen depleted cuprate superconductors Tl2Ba2CaCu2O8−δ
1993
Strain in cracked AlGaN layers
2002 StandoutNobel
Electrical characteristics and energy-band offsets in n-InAs0.89Sb0.11/n-GaSb heterojunctions grown by the liquid phase epitaxy technique
1989
Observation of compositional pulling phenomenon in AlxGa1−xN (0.4<x<1.0) films grown on (0001) sapphire substrates
2003
Molecular beam epitaxy
1985
Electronic microrefrigerator based on a normal-insulator-superconductor tunnel junction
1994 StandoutNobel
Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices
1985
Band offsets at the InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP substrate
1998
Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
1994 Standout
Electronic properties of semiconductor alloy systems
1985
Correlated electrons in high-temperature superconductors
1994 Standout
Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
1994
In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth
2013 StandoutNobel
Growth and Characterization of High-Quality InAs0.86Sb0.05P0.09 Alloy by Liquid-Phase Epitaxy
1999

Works of J. Primot being referenced

Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy
1987
MBE growth of AlxGayIn1−x−yAs for a DHBT structure
1987
Auto lattice matching effect for allnas grown by MBE at high substrate temperature
1989
Etude dilatometrique de la transition ferroelastique de l'orthophosphate de plomb monocristallin
1975
Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy
1989
Differential thermal analysis, dilatometric and Brillouin scattering measurements at the ferroelastic phase transition of lead phosphovanadate compounds
1980
Growth conditions and characterization of InGaAs/GaAs strained layers superlattices
1984
Phase diagram of the system Bi1.6Pb0.4Sr2CuO6-CaCuO2 between 825°C and 1100°C
1992
Observation of stepwise variations of the lattice parameter on GaxIn1−xAsyP1−y layers grown by liquid phase epitaxy on (100) InP
1981
The influence of supercooling on the liquid phase epitaxial growth of inas1−xsbx on (100) GASB substrates
1987
Growth of InAsPSb/InAs Heterostructures
1986
O17nuclear-magnetic-resonance evidence for distinct carrier densities in the two types ofCuO2planes of (Bi,Pb)2Sr2Ca2Cu3Oy
1991
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