Citation Impact
Citing Papers
Optical properties of type-II InGaN/GaAsN/GaN quantum wells
2009
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Physics of high-power InGaN/GaN lasers
2002 StandoutNobel
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
2009 StandoutNobel
Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes
2007 StandoutNobel
Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy
2003
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
2010 StandoutNobel
Optical properties of tensile-strained wurtzite GaN epitaxial layers
1997 StandoutNobel
Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
2012 StandoutNobel
Spontaneous emission rate of green strain‐compensated InGaN/InGaN LEDs using InGaN substrate
2010
Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
2009 StandoutNobel
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency
2009
InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
1999 StandoutNobel
Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasers
1997
What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?
2002
Optical gain of strained wurtzite GaN quantum-well lasers
1996
High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
2010 StandoutNobel
Crystal Orientation Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well Lasers
2003
First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes
2006 StandoutNobel
Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment
2000
Directly diode-pumped, Kerr-lens mode-locked, few-cycle Cr:ZnSe\n oscillator
2019 StandoutNobel
Piezoelectric and Spontaneous Polarization Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well with Arbitrary Crystal Orientation
2003
Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates
2011 StandoutNobel
Crystal orientation dependence of many-body optical gain in wurtzite GaN/AlGaN quantum-well lasers
2002
Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer
2007
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
2008 StandoutNobel
Electronic and optical properties of staggered InGaN/InGaN quantum‐well light‐emitting diodes
2009
Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
2013 StandoutNobel
Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers
2010
Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes
2010 StandoutNobel
Electronic and Optical Properties of ${\rm a}$- and ${\rm m}$-Plane Wurtzite InGaN–GaN Quantum Wells
2007
Blue-Green InGaN/GaN Laser Diodes on Miscutm-Plane GaN Substrate
2009 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes
2009
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
1998 StandoutNobel
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
2009 StandoutNobel
Effect of (1010) crystal orientation on many-body optical gain of wurtzite InGaN/GaN quantum well
2003
Band parameters for nitrogen-containing semiconductors
2003 Standout
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
1998 StandoutNobel
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Works of J. Minch being referenced
Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment
2000
Theory and experiment of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As long-wavelength strained quantum-well lasers
1999
Amplified spontaneous emission spectroscopy in strained quantum-well lasers
1995