J. Marczewski

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

Nanometer size field effect transistors for terahertz detectors

Electronic detectors for electron microscopy

Superconductivity in diamond

Electron imaging with Medipix2 hybrid pixel detector

2D Detectors for particle physics and for imaging applications

Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum

Effect of boron incorporation on the structure of polycrystalline diamond films

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Variation of the cell parameter of polycrystalline boron doped diamond films

Lattice parameters and thermal expansion of superconducting boron-doped diamonds

Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations

Synthesis of polycrystalline diamond in the boron carbide–graphite and boron–graphite systems under high pressure and temperature

Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates

Capacitively Coupled Active Pixel Sensors with Analog Readout for Future e + e - Colliders

SOI active pixel detectors of ionizing radiation-technology and design development

Temperature enhancement of terahertz responsivity of plasma field effect transistors

Development of monolithic active pixel detector in SOI technology

Lattice dilation by free electrons in heavily doped GaAs:Si

Hybrid active pixel sensors and SOI inspired option

Secondary electron doping contrast: Theory based on scanning electron microscope and Kelvin probe force microscopy measurements