J. Landreau

Low-threshold amplified spontaneous emission and lasing from colloidal nanocrystals of caesium lead halide perovskites

Recent advances in physical reservoir computing: A review

Single-mode tunable laser emission in the single-exciton regime from colloidal nanocrystals

Device Requirements for Optical Interconnects to Silicon Chips

Chemical Synthesis and Luminescence Applications of Colloidal Semiconductor Quantum Dots

Millimeter-Wave Photonic Components for Broadband Wireless Systems

Wireless sub-THz communication system with high data rate

Analytic approximations for degenerate accumulation layers in semiconductors, with applications to barrier lowering in isotype heterojunctions

AlAsSb-based distributed Bragg reflectorsusing InAlGaAs as high-index layer

Mode-locked quantum-dot lasers

40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

All-optical reservoir computer based on saturation of absorption

Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect

AlGaInAs/InP 1.5 µm MQW DFB laser diodesexceeding 20 GHz bandwidth

Design and analysis of double-fused 1.55-μm vertical-cavity lasers

Current-crowded carrier confinement in double-heterostructure lasers

All-optical extinction-ratio enhancement of a 160 GHz pulse train by a saturable-absorber vertical microcavity

Scaling of the saturation energy in microcavity saturable absorber devices

Subpicosecond pulse generation at 134GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56μm

Very simple approach for high performance DFB laser-electroabsorptionmodulator monolithic integration

Very low chirping of InGaAs-InGaAlAs MQW DFB BRS lasers under 10 Gbit/s modulation

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Low-current proton-bombarded (GaAl)As double-heterostructure lasers

Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength