Citation Impact

Citing Papers

Composition-dependent Raman modes of Mo1−xWxS2 monolayer alloys
2013
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Complete composition tunability of InGaN nanowires using a combinatorial approach
2007
Mie Resonances, Infrared Emission, and the Band Gap of InN
2004 StandoutNobel
Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2
2013
Resonantly enhanced selective photochemical etching of GaN
2009
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Optical bandgap energy of wurtzite InN
2002
X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN
2003
Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells
2003 StandoutNobel
Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
2011 StandoutNobel
Indium nitride (InN): A review on growth, characterization, and properties
2003
Temperature dependence of the fundamental band gap of InN
2003
Direct water photoelectrolysis with patterned n-GaN
2007 StandoutNobel
Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams
2005
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Fundamental Bulk/Surface Structure–Photoactivity Relationships of Supported (Rh2–yCryO3)/GaN Photocatalysts
2013
High internal and external quantum efficiency InGaN/GaN solar cells
2011 StandoutNobel
Resonant Raman and FTIR spectra of carbon doped GaN
2014 StandoutNobel
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Theory of plasmon-enhanced Förster energy transfer in optically excited semiconductor and metal nanoparticles
2007
Substitutional carbon in group-III nitrides:Ab initiodescription of shallow and deep levels
2002
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Localized Surface Plasmon Resonance in Semiconductor Nanocrystals
2018
First-principles calculations of gap bowing inInxGa1−xNandInxAl1−xNalloys: Relation to structural and thermodynamic properties
2002
A comprehensive review of ZnO materials and devices
2005 Standout
Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
2003
Fabrication and characterization of InGaN p-i-n homojunction solar cell
2009
Optical properties and electronic structure of InN and In-rich group III-nitride alloys
2004
Phase Separation, Gap Bowing, and Structural Properties of Cubic InxAl1—xN
2002
Etch rate and surface morphology control in photoelectrochemical etching of GaN
2004
Decay of zone-center phonons in GaN with A1, E1, and E2 symmetries
2007
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Strain effects on indium incorporation and optical transitions in green‐light InGaN heterostructures of different orientations
2011
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
2008
Lanthanide-Activated Phosphors Based on 4f-5d Optical Transitions: Theoretical and Experimental Aspects
2017 Standout
Shubinaet al.Reply:
2004 StandoutNobel
Composition dependence of the optical phonon energies in hexagonal AlxGa1−xN
2001
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Effects of film polarities on InN growth by molecular-beam epitaxy
2003
Wet etching of GaN, AlN, and SiC: a review
2005
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Particulate Photocatalysts for Light-Driven Water Splitting: Mechanisms, Challenges, and Design Strategies
2019 Standout
High-quality InGaN∕GaN heterojunctions and their photovoltaic effects
2008
Phase diagram, chemical bonds, and gap bowing of cubic InxAl1−xN alloys: Ab initio calculations
2002
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
2011 StandoutNobel
Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy
2002
Design and characterization of GaN∕InGaN solar cells
2007
Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures
2000
Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
2003 StandoutNobel
Interface structures in beta-silicon carbide thin films
1987 StandoutNobel
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals
2015 StandoutScience
Small band gap bowing in In1−xGaxN alloys
2002
Unusual properties of the fundamental band gap of InN
2002
Evaluation of physical parameters for the group III nitrates: BN, AlN, GaN, and InN
2002
Reply to ?Comment on ?Band Gap of InN and In-Rich InxGa1-xN Alloys (0.36 < x < 1)??
2002
Research opportunities to advance solar energy utilization
2016 StandoutScience
On the band gap of indium nitride
2003
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Do we know the fundamental energy gap of InN?
2002
Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?
2016 Standout
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
2013 StandoutNobel
Comment on ?Band Gap of InN and In-Rich InxGa1?xN Alloys (0.36 < x < 1)?
2002
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Effects of the narrow band gap on the properties of InN
2002
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
On Choosing Phosphors for Near-UV and Blue LEDs for White Light
2015
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures
2012 StandoutNobel
Vacancies and interstitials in indium nitride: Vacancy clustering and molecular bondlike formation from first principles
2009
Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2007 StandoutNobel
When group-III nitrides go infrared: New properties and perspectives
2009
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
Phonon structure of InN grown by atomic layer epitaxy
1999
Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell
2011
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
Recombination of free and bound excitons in GaN
2008
Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
2011
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth
2013 StandoutNobel
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Correlation between strain, optical and electrical properties of InN grown by MBE
2003
Donor and acceptor concentrations in degenerate InN
2002
Breakdown of the band-gap-common-cation rule:  The origin of the small band gap of InN
2003
Nitrogen-related local vibrational modes in ZnO:N
2002

Works of J. Graul being referenced

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2002
Growth mechanism of polycrystalline β-SiC layers on silicon substrate
1972
Photoluminescence, depth profile, and lattice instability of hexagonal InN films
2003
Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces
1997
Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions
2000
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
2001
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
2002
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
1998
Statistical Ga clusters andA1(TO)gap mode inAlxGa1−xNalloys
2000
Smooth GaN surfaces by photoinduced electro-chemical etching
1999
Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys
2003
Formation and Characterization of Oxides on GaN surfaces
2000
Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)
2001
Composition dependence of optical phonon energies and Raman line broadening in hexagonalAlxGa1−xNalloys
2002
Band Gap of Hexagonal InN and InGaN Alloys
2002
Rankless by CCL
2026