Citation Impact

Citing Papers

Terahertz spectroscopy and imaging – Modern techniques and applications
2010 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters
2012 StandoutNobel
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
2017
Carrier-envelope phase stabilization of a multi-millijoule, regenerative-amplifier-based chirped-pulse smplifier dystem
2009 StandoutNobel
Electrically Driven Quantum Dot/Wire/Well Hybrid Light‐Emitting Diodes
2011
Deconstructing the photon stream from single nanocrystals: from binning to correlation
2013 StandoutNobel
Platinum single-atom and cluster catalysis of the hydrogen evolution reaction
2016 Standout
Metal halide perovskites for light-emitting diodes
2020 Standout
Gallium adsorption onto (1120) gallium nitride surfaces
2004 StandoutNobel
Efficient and High-Color-Purity Light-Emitting Diodes Based on In Situ Grown Films of CsPbX3 (X = Br, I) Nanoplates with Controlled Thicknesses
2017
Seasonal cycle and secular trend of the total and tropospheric column abundance of ethane above the Jungfraujoch
1991
Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection
2007
m -plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga∕N flux ratios on m-plane 4H-SiC substrates
2007
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
Atomic Layer Deposition Functionalized Composite SOFC Cathode La0.6Sr0.4Fe0.8Co0.2O3-δ -Gd0.2Ce0.8O1.9: Enhanced Long-Term Stability
2013 StandoutNobel
The security of practical quantum key distribution
2009 Standout
Acetone in the atmosphere: Distribution, sources, and sinks
1994 StandoutNobel
Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces
2007
Photoconductivity studies of treated CdSe quantum dot films exhibiting increased exciton ionization efficiency
2004 StandoutNobel
Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
2011
Ga adsorption and desorption kinetics onM-plane GaN
2004
Atomic Layer Deposition: An Overview
2009 Standout
Plastic strain relaxation of nitride heterostructures
2004
Polarity control during molecular beam epitaxy growth of Mg-doped GaN
2003
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers
2004
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
The growth of N-face GaN by MOCVD: effect of Mg, Si, and In
2004 StandoutNobel
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
QUANTUM DOT INFRARED DETECTORS AND SOURCES
2002
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Single-photon detectors for optical quantum information applications
2009 Standout
GaN quantum dot density control by rf-plasma molecular beam epitaxy
2004
Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs∕InP(001) quantum dot
2006
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Ultrafast carrier capture dynamics in InGaAs∕GaAs quantum wires
2008
GaN blue photonic crystal membrane nanocavities
2005 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Structural properties of self-organized semiconductor nanostructures
2004
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays
2014 StandoutNobel
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
2012
Probing Linewidths and Biexciton Quantum Yields of Single Cesium Lead Halide Nanocrystals in Solution
2017 StandoutNobel
Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy
2004
Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas inm-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
2013 StandoutNobel
Properties and potential optoelectronic applications of lead halide perovskite nanocrystals
2017 StandoutScience
Engineering InAsxP1-x/InP/ZnSe III−V Alloyed Core/Shell Quantum Dots for the Near-Infrared
2005 StandoutNobel
Multijunction GaInN-based solar cells using a tunnel junction
2014 StandoutNobel
Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition
2008 StandoutNobel
Progress in the growth of nonpolar gallium nitride
2007 StandoutNobel
2D Behaviors of Excitons in Cesium Lead Halide Perovskite Nanoplatelets
2017
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electron-blocking layer
2011
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
2009
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy
2004
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
In-polar InN grown by plasma-assisted molecular beam epitaxy
2006
Controlled Assembly and Anomalous Thermal Expansion of Ultrathin Cesium Lead Bromide Nanoplatelets
2023 StandoutNobel
Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
2012 StandoutNobel
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
2010
Dominant shallow acceptor enhanced by oxygen doping in GaN
2006 StandoutNobel
THE HITRAN MOLECULAR SPECTROSCOPIC DATABASE AND HAWKS (HITRAN ATMOSPHERIC WORKSTATION): 1996 EDITION
1998 Standout
One-Dimensional Highly-Confined CsPbBr3 Nanorods with Enhanced Stability: Synthesis and Spectroscopy
2022 StandoutNobel
Honeycomb Carbon: A Review of Graphene
2009 Standout

Works of J. Brault being referenced

Detection par Voie Spectroscopique, de l'Acetylene et de l'Ethane dans l'Atmosphere Terrestre, a partir d'Observations Solaires Infrarouges au Sol
1982
Femtosecond measurement of electron capture and intersubband relaxation in self-organized InAs quantum wires onIn1xAlxAs/InP
2001
Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots
2010
Alloying effects in self-assembled InAs/InP dots
1999
Cathodoluminescence study of carrier diffusion in AlGaN
2003
Spectroscopy of the electronic states in InAs quantum dots grown onInxAl1xAs/InP(001)
2004
Gallium adsorption on (0001) GaN surfaces
2003
Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)
1999
Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization
2002
High doping level in Mg-doped GaN layers grown at low temperature
2008
Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrates
2003
Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN
2002
Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
2002
Excitons in nitride heterostructures: From zero- to one-dimensional behavior
2013
From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
2004
Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
2003
Phase separation in GaN/AlGaN quantum dots
2009
Atomic Layer Epitaxy of Hexagonal and Cubic GaN Nanostructures
2001
Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides
2006
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