Standout Papers

Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitrid... 1984 2026 1998 2012 107
  1. Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy (1996)
    Satoru Tanaka, R. S. Kern et al. Japanese Journal of Applied Physics
  2. Kinetics and Mechanisms of High‐Temperature Creep in Silicon Carbide: II, Chemically Vapor Deposited (1984)
    R. F. Davis, J. Bentley et al. Journal of the American Ceramic Society
  3. Occurrence and Distribution of Boron‐Conitaining Phases in Sintered ş‐Silicon Carbide (1986)
    Karren L. More, J. Bentley et al. Journal of the American Ceramic Society
  4. Kinetics and Mechanisms of High-Temperature Creep in Silicon Carbide: I, Reaction-Bonded (1984)
    R. F. Davis, J. Bentley et al. Journal of the American Ceramic Society

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