Citation Impact
Citing Papers
Molecular Single‐Bond Covalent Radii for Elements 1–118
2008 Standout
Two-Photon Diffraction and Quantum Lithography
2001 Standout
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010 StandoutNobel
The adsorption of oxygen at GaN surfaces
1999
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
Reconstructions of theGaN ( 000 1 ¯ )
1997
Reflectance anisotropy as an in situ monitor for the growth of InP on (001) InP by pseudo-atmospheric pressure atomic layer epitaxy
1997
Scanning Probe Microscopy
1998
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Electronic structure, properties, and phase stability of inorganic crystals: A pseudopotential plane-wave study
2000 Standout
The interaction of water with solid surfaces: fundamental aspects revisited
2002 Standout
Theoretical study of the Si/GaAs(001)-c(4×4) surface
1997
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Optical properties of cubic GaN and (In,Ga)N
1998
The vibrational spectra of krypton and xenon difluoride: High-resolution infrared studies and ab initio calculations
1994
Temperature dependence of the band gap in InAsyP1−y
2000
Conduction-Band Discontinuity of InAsP/InP Heterojunction
1998
Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
2003 StandoutNobel
Dipole correction for surface supercell calculations
1999 Standout
Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams
2001 StandoutNobel
Reconstructions of GaN(0001) and (0001) surfaces: Ga-rich metallic structures
1998
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Wet oxidation of AlAs films under ultrahigh vacuum conditions
1997
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
GaN (0001)-(1×1) surfaces: Composition and electronic properties
1998
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Clean and As-Covered Zinc-Blende GaN (001) Surfaces: Novel Surface Structures and Surfactant Behavior
1998
Oxidation of AlAs films under ultrahigh vacuum conditions: interaction of H2O and O2 with the AlAs(001) surface
1997
Dendrimers Designed for Functions: From Physical, Photophysical, and Supramolecular Properties to Applications in Sensing, Catalysis, Molecular Electronics, Photonics, and Nanomedicine
2010 Standout
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes
2011 StandoutNobel
Growth and characterization of cubic GaN
1997
Origins of scale invariance in growth processes
1997
"Dip-Pen" Nanolithography
1999 StandoutScience
III–Nitride UV Devices
2005
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Observation of highly dispersive surface states on GaN(0001)1×1
1999 StandoutNobel
Simple model for anisotropic step growth
1998 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Works of J. Behrend being referenced
Reconstruction of the GaAs(001) surface induced by submonolayer Si deposition
1995
Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)
1995
Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs
1996
Atomic structure of the surface reconstructions of zincblende GaN(001)
1997
Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy
1997
Formation of GaAs/AlAs(001) interfaces studied by scanning tunneling microscopy
1996
Interactive Loomis-Wood assignment programs
1989
Morphological instabilities on exactly oriented and on vicinal GaAs (001) surfaces during molecular beam epitaxy
1995
Different As desorption behaviour at step edges on InAs(001) and GaAs(001) surfaces
1997