Citation Impact
Citing Papers
Large-area display textiles integrated with functional systems
2021 StandoutNature
Nanotaper for compact mode conversion
2003
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Recent developments in compact ultrafast lasers
2003 StandoutNature
DNA-templated assembly and electrode attachment of a conducting silver wire
1998 StandoutNature
Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode
2002
Micrometre-scale silicon electro-optic modulator
2005 StandoutNature
Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2
2013
Design and Implementation of Smart Home Control Systems Based on Wireless Sensor Networks and Power Line Communications
2014 Standout
Photonic crystal laser lift-off GaN light-emitting diodes
2006 StandoutNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
A Survey on 5G Networks for the Internet of Things: Communication Technologies and Challenges
2017 Standout
Type I to type II transition at the interface between random and ordered domains of AlxGa1−xN alloys
2004
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
1999
An Information Framework for Creating a Smart City Through Internet of Things
2014 Standout
Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells
2003 StandoutNobel
Wireless Body Area Networks: A Survey
2014 Standout
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
2006 StandoutNobel
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
Internet of Things: A Survey on Enabling Technologies, Protocols, and Applications
2015 Standout
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
Optical multi-mode interference devices based on self-imaging: principles and applications
1995 Standout
Localized high-energy emissions from the vicinity of defects in high-efficiencyGa x In 1 − x N ∕ Ga N
2005
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
2003
Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
2000 StandoutNobel
Optical interconnects to silicon
2000
Silicon shadow mask MOVPE for in-plane thickness control of structures
1997
Time-resolved photoluminescence measurements of InGaN light-emitting diodes
1998
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Compositional pulling effects inIn x Ga 1 − x N / G a N
2001
A Survey of Indoor Localization Systems and Technologies
2019 Standout
V-defects and dislocations in InGaN/GaN heterostructures
2005
Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers
1997
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD
2007
Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
1998
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
The red σ2/kT spectral shift in partially disordered semiconductors
2003
GaN light-emitting diodes with Archimedean lattice photonic crystals
2006 StandoutNobel
Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
2003
Large and composition-dependent band gap bowing in InxGa1−xN alloys
1999
Temperature dependence of the band gap in InAsyP1−y
2000
Wireless body sensor networks based on metamaterial textiles
2019
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Slab plasmon polaritons and waveguide modes in four-layer resonant semiconductor waveguides
1997
Security for the Internet of Things: A Survey of Existing Protocols and Open Research Issues
2015 Standout
Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity
2003
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
Unconventional Methods for Fabricating and Patterning Nanostructures
1999 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Structural analysis of InGaN epilayers
2001
Guiding, modulating, and emitting light on Silicon-challenges and opportunities
2005
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
2005
Calculation of electric field and optical transitions in InGaN∕GaN quantum wells
2005
Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition
1998
Exciton localization and the Stokes’ shift in InGaN epilayers
1999
Research opportunities to advance solar energy utilization
2016 StandoutScience
Wireless Coexistence between IEEE 802.11- and IEEE 802.15.4-Based Networks: A Survey
2011
Using software-defined networking principles for wireless sensor networks
2015
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission
2014 StandoutNobel
Field-dependent carrier decay dynamics in strainedIn x Ga 1 − x N / G a N
2002
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
Recombination processes in InxGa1−xN light-emitting diodes studied through optically detected magnetic resonance
1998 StandoutNobel
Network Function Virtualization: State-of-the-Art and Research Challenges
2015 Standout
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Time-Reversed Lasing and Interferometric Control of Absorption
2011 StandoutScience
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
1998
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
High temperature thermoelectric properties of optimized InGaN
2011 StandoutNobel
Dichromatic color tuning with InGaN-based light-emitting diodes
2008 StandoutNobel
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Origin of Luminescence from InGaN Diodes
1999
Surface energetics, pit formation, and chemical ordering in InGaN alloys
1999
Adaptive mesh generation for full-vectorial guided-mode and beam-propagation solutions
2000 StandoutNobel
Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
2001
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Works of Ingrid Moerman being referenced
Evaluation of RF-based Indoor Localization Solutions for the Future Internet
2013
Holographically defined grating assisted Micro-cavity light emitting diodes.
1999
Extremely small fabrication tolerant InP-based power-splitting and combining structures by deep etching
1994
A Comprehensive Survey of Wireless Body Area Networks
2010
Characterization of On-Body Communication Channel and Energy Efficient Topology Design for Wireless Body Area Networks
2009
The optical linewidth of InGaN light emitting diodes
1997
Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy
1998
Platform for benchmarking of RF-based indoor localization solutions
2015
Analysis and Experimental Verification of Frequency-Based Interference Avoidance Mechanisms in IEEE 802.15.4
2014
Hexagonal Growth Hillocks in GaN Epilayers
1996
Distributed cognitive coexistence of 802.15.4 with 802.11
2006
A review on fabrication technologies for the monolithic integration of tapers with III-V semiconductor devices
1997
Extremely small multimode interference couplers and ultrashort bends on InP by deep etching
1994
Indium segregation in InGaN quantum-well structures
2000
Chemical mapping of InGaN MQWs
2001
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
2000
Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD
1999
Novel compact polarization converters based on ultra short bends
1996
High Indium Content Ingan Films and Quantum Wells.
1997
Non-planar MOVPE growth using a novel shadow-masking technique
1991
Realisation of highly efficient 850 nm top emittingresonant cavity light emitting diodes
1999
Experimental study of an In0.53Ga0.47As–InP resonant plasma waveguide modulator for medium-infrared light
1994
Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers
2002
A survey on wireless body area networks
2010
IETF Standardization in the Field of the Internet of Things (IoT): A Survey
2013
Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study
1999
The optical and structural properties of InGaN epilayers with very high indium content
1999
Improving Reliability in Multi-hop Body Sensor Networks
2008
Sensor Function Virtualization to Support Distributed Intelligence in the Internet of Things
2015
Material optimisation for AlGaN/GaN HFET applications
2001
Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers
1999
Optical linewidths of InGaN light emitting diodes and epilayers
1997
The EVARILOS Benchmarking Handbook: Evaluation of RF-based Indoor Localization Solutions
2013
The Wireless Autonomous Spanning tree Protocol for Multihop Wireless Body Area Networks
2006
Internet of Things Virtual Networks: Bringing Network Virtualization to Resource-Constrained Devices
2012
Influence of buffer layer and processing on the dark current of 2.5 µm-wavelength 2%-mismatched InGaAs photodetectors
1997
snapMac: A generic MAC/PHY architecture enabling flexible MAC design
2014
Enabling direct connectivity between heterogeneous objects in the internet of things through a network-service-oriented architecture
2011
The Wireless Autonomous Spanning tree Protocol for Multihop Wireless Body Area Networks
2006