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Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-<mml... 2012 2026 2016 2021 1.1k
  1. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) (2012)
    Won Seok Yun, Sang Wook Han et al. Physical Review B

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3 by Nobel laureates 36 from Science/Nature 112 standout
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Works of In Gee Kim being referenced

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
2012 Standout

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In Gee Kim 187 1387 217 633 24 1.6k
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Zhixi Bian 220 1104 200 483 38 1.4k
Young K. Yoo 151 987 283 539 24 1.3k
Naoyuki Kawamoto 171 1125 366 423 48 1.4k
Francesco Ricci 218 1560 362 573 28 1.7k
Juan I. Beltrán 128 1029 373 650 39 1.5k
Balachandran Radhakrishnan 138 848 157 831 19 1.5k
Clemens J. Först 181 850 123 511 14 1.2k
H. Ramanarayan 132 1398 233 503 29 1.6k
Zhihong Zhang 251 1011 222 532 35 1.3k

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