Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Flexible ferroelectric organic crystals
2016 StandoutNobel
Room‐Temperature, Ligand‐ and Base‐Free Heck Reactions of Aryl Diazonium Salts at Low Palladium Loading: Sustainable Preparation of Substituted Stilbene Derivatives
2010
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
2014 StandoutNature
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Palladium-catalyzed double N-arylation to synthesize multisubstituted dibenzoazepine derivatives
2012
Boron Nitride Nanotubes and Nanosheets
2010 Standout
Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy
2012 StandoutNobel
Optical properties and electronic structure of InN and In-rich group III-nitride alloys
2004
Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire
2005 StandoutNobel
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
2008 StandoutNobel
Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
2013 StandoutNobel
Inkjet Printing of Polymers: State of the Art and Future Developments
2004 Standout
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Multiferroic magnetoelectric composites: Historical perspective, status, and future directions
2008 Standout
Higher efficiency InGaN laser diodes with an improved quantum well capping configuration
2002 StandoutNobel
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Accurate calculation of polarization-related quantities in semiconductors
2001
Maximally localized Wannier functions constructed from projector-augmented waves or ultrasoft pseudopotentials
2007
Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
2011 StandoutNobel
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
The Structure−Property Relationship of Poly(vinylidene difluoride)-Based Polymers with Energy Storage and Loss under Applied Electric Fields
2007
Magnetoelectric properties of multiferroic composites with pseudo-1-3-type structure
2006
Evaluation of GaN substrates grown in supercritical basic ammonia
2009 StandoutNobel
Proposal for Heralded Generation and Detection of Entangled Microwave–Optical-Photon Pairs
2020 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Flexible Nanodielectric Materials with High Permittivity for Power Energy Storage
2013 Standout
PZT pillars for 1-3 composites prepared by ink-jet printing
2001
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Engineered Piezoelectricity in Graphene
2011
Cavity piezomechanical strong coupling and frequency conversion on an aluminum nitride chip
2016
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (112¯2)-plane GaN
2006 StandoutNobel
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Maximally localized Wannier functions: Theory and applications
2012 Standout
Calculation of electric field and optical transitions in InGaN∕GaN quantum wells
2005
Ferroelectric properties of vinylidene fluoride copolymers
1989
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
2011 StandoutNobel
Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage
2015 StandoutScience
The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
2012 StandoutNobel
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
A Heck–Matsuda Process for the Synthesis of β‐Arylethenesulfonyl Fluorides: Selectively Addressable Bis‐electrophiles for SuFEx Click Chemistry
2016 StandoutNobel
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
2013 StandoutNobel
Applications of Palladium-Catalyzed C–N Cross-Coupling Reactions
2016 Standout
Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
2013 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Dichromatic color tuning with InGaN-based light-emitting diodes
2008 StandoutNobel
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
2011 StandoutNobel
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2007 StandoutNobel
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Near-band-edge recombinations in multiwalled boron nitride nanotubes: Cathodoluminescence and photoluminescence spectroscopy measurements
2008
Band parameters for nitrogen-containing semiconductors
2003 Standout
Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography
2013 StandoutNobel
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Works of I.L. Guy being referenced
The piezoelectric coefficient of gallium nitride thin films
1998
Extensional piezoelectric coefficients of gallium nitride and aluminum nitride
1999
Electromechanical properties of 1-3 piezoelectric ceramic/piezoelectric polymer composites
1994
Piezoelectricity in indium nitride
2004
The Synthesis of a Combretastatin A-4 Based Library and Discovery of New Cooperative ortho-Effects in Wittig Reactions Leading to (Z)-Stilbenes
2006
Shear piezoelectric coefficients of gallium nitride and aluminum nitride
1999
Observation of a change in the form of polarization reversal in a vinylidene fluoride/trifluoroethylene copolymer
1988
Piezoelectric Ceramic/Polymer Composites for High Frequency Applications
1994
Conformational and crystallographic changes occurring in polyvinylidene fluoride during the production of D-E hysteresis loops
1987