Ibrahim Ban

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films

Cleaning of AlN and GaN surfaces

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

In situ cleaning of GaN/6H-SiC substrates in NH3

Observation of highly dispersive surface states on GaN(0001)1×1

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition of Epitaxial Silicon onto (100) Silicon: I . The Influence of Prebake on (Epitaxy/Substrate) Interfacial Oxygen and Carbon Levels