Citation Impact
Citing Papers
Some candidate atoms and ions for frequency standards research using laser radiative cooling techniques
1984 StandoutNobel
Mid-temperature thermoelectric performance of zone-melted Sb2(Te,Se)3 alloys near phase transition boundary
2019
Effects of Heat Treatment on the Magnetic Phase Transition and Magnetocaloric Properties of Mn<SUB>1+δ</SUB>As<SUB>1−<I>x</I></SUB>Sb<I><SUB>x</SUB></I>
2006
Ionic transport in hybrid lead iodide perovskite solar cells
2015 Standout
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
2018 StandoutNature
Lateral mode analysis of buried heterostructure diode lasers by the finite-element method
1986 StandoutNobel
Plasma-enhanced chemical vapour deposition of TiO2/polymer composite layers
1994 StandoutNobel
Fabrication of Nickel Dots Using Selective Electroless Deposition on Silicon Wafer
1998
Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
1985 StandoutNobel
Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
1998 StandoutNobel
UV picosecond pulse amplification by a XeCl laser
1980
Temperature distribution along the striped active region in high-power GaAlAs visible lasers
1985
Heterostructure injection lasers
1976
Synchronous amplification of subpicosecond pulses
1983 StandoutNobel
Studies of titanium dioxide film growth from titanium tetraisopropoxide
1993
Intensity noise of semiconductor laser diodes in fiber optic analog video transmission
1983
Chemical vapor deposition of doped TiO2 thin films
1987
Imaging InGaAsP quantum-well lasers using near-field scanning optical microscopy
1994 StandoutNobel
Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy
1987
The incorporation and characterisation of acceptors in epitaxial GaAs
1975
New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials
2016
Continuous wave high-power, high-temperature semiconductor laser phase-locked arrays
1982
Recent developments in magnetocaloric materials
2005 Standout
Electroluminescence from heterostructures of poly(phenylene vinylene) and inorganic CdSe nanocrystals
1998 StandoutNobel
Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition
1983
InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
1999 StandoutNobel
Advanced Thermoelectric Design: From Materials and Structures to Devices
2020 Standout
Electroless nickel, alloy, composite and nano coatings – A critical review
2013 Standout
Continuously operated visible-light-emitting lasers using liquid-phase-epitaxial InGaPAs grown on GaAs substrates
1983
LPE of buried heterostructure laser devices
1986
Understanding TiO2Photocatalysis: Mechanisms and Materials
2014 Standout
Point Defect Engineering of High‐Performance Bismuth‐Telluride‐Based Thermoelectric Materials
2014
Effect of concentration deviation from stoichiometry on the magnetism of Mn1+As0.75Sb0.25
2004
The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs Substrates
1986
Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength
1980
InGaN/GaN/AiGaN-Based Laser Diodes with an Estimated Lifetime of Longer than 10,000 Hours
1997 StandoutNobel
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
1997 StandoutNobel
The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility
1986 StandoutNobel
Irradiation-induced defects in GaAs
1985 Standout
InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices
1998 StandoutNobel
Observation of two-dimensional electrons in LPE-grown GaAs-AlxGa1−xAs heterojunctions
1979 StandoutNobel
Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
1989 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Electrical Properties of n-Type Cd1-xMgxTe
1969
InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours
1998 StandoutNobel
Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. I
1972
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
InGaAsP InP current confinement mesa substrate buried heterostructure laser diode fabricated by one-step liquid-phase epitaxy
1984 StandoutNobel
GaAs-Al<inf>x</inf>Ga<inf>1-x</inf>As strip buried heterostructure lasers
1979
Materials issues for InGaN-based lasers
1998 StandoutNobel
Status of the GaAs metal—oxide—semiconductor technology
1980
Preparation and characterization of TiO2 films by a novel spray pyrolysis method
1990
Low-noise AlGaAs lasers grown by organometallic vapor phase epitaxy
1989
Theory of the energy-band lineup at an abrupt semiconductor heterojunction
1977 StandoutNobel
Calculation of III-III-V-V quaternary layer thickness grown by liquid phase epitaxy - application to InGaAsP
1982
Advances in thermoelectric materials research: Looking back and moving forward
2017 StandoutScience
Rationally Designing High-Performance Bulk Thermoelectric Materials
2016 Standout
Transparent conductors—A status review
1983 Standout
Generation and amplification of sub-picosecond pulses using a frequency-doubled neodymium YAG pumping source
1981 StandoutNobel
Quantum Dot Superlattice Thermoelectric Materials and Devices
2002 StandoutScience
On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
1983
Survey on Free Space Optical Communication: A Communication Theory Perspective
2014 Standout
Using diode lasers for atomic physics
1991 StandoutNobel
Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers
1988 StandoutNobel
Fabrication and characteristics of ion beam etched cavity InP/InGaAsP BH lasers
1987
Mechanical properties of thin films
1989 Standout
AlGaAs/GaAs melt-etched inner stripe laser diode with self-aligned structure
1985
Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy
1998 StandoutNobel
Melt-back etching of GaN
1997 StandoutNobel
Crystallisation and Phase Transformation Behaviour of Electroless Nickel-Phosphorus Deposits and Their Engineering Properties
2002
Characterization of high purity GaAs grown by molecular beam epitaxy
1982 StandoutNobel
Microwave photonics combines two worlds
2007 Standout
Enhancement in thermoelectric performance of bismuth telluride based alloys by multi-scale microstructural effects
2012
Compound tellurides and their alloys for peltier cooling—A review
1972
Elastic relationships in layered composite media with approximation for the case of thin films on a thick substrate
1987
Electrical properties of ion-implanted p-n junction diodes in β-SiC
1988 StandoutNobel
LPE Growth of GaInAsP on (100)GaAs by a Two-Phase-Solution Technique
1984
Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer
1999
Enhanced diffusion mechanisms
1978
Effect of deviation from stoichiometry on magnetic and magnetocaloric properties in MnAs1−Sb
2004
High-κ gate dielectrics: Current status and materials properties considerations
2001 Standout
Magnetocaloric effect: From materials research to refrigeration devices
2017 Standout
Spray pyrolysis in solar cells and gas sensors
1981
Comparison between optical and electrical interconnects based on power and speed considerations
1988
Optical Processor For Phased-Array Antenna Beam Formation
1984
Electronic properties of two-dimensional systems
1982 Standout
Preparation and properties of vapour phase epitaxial silicon carbide diodes
1972
Works of I. Teramoto being referenced
Variation of Liquid and Solid Compositions during LPE Growth from a Ternary Component Solution
1979
Electroless Nickel Plating on Silicon
1968
Relations between the electronic properties and the chemical bonding of sbxBi2−xTe3−ySey system
1961
Vapor Deposition of TiO2
1968
Very low threshold visible TS lasers
1981
A new chemical etching technique for formation of cavity facets of (GaAl)As lasers
1985
Thermal-oxide gate GaAs MOSFET's
1978
Feasibility of the LPE Growth of AlxGayIn1-x-yP on GaAs Substrates
1983
Behavior of Gold in Cadmium Telluride Crystals
1962
Calculation of distribution equilibrium of amphoteric silicon in gallium arsenide
1972
Terraced Substrate GaAs-(GaAl) As Lasers
1979
The existence region and the magnetic and electrical properties of MnSb
1968
Etch Pits and Polarity in CdTe Crystals
1962
Terraced-substrate GaAs- (GaAl)As injection lasers
1979
Fundamental transverse and longitudinal mode oscillation in terraced substrate GaAs-(GaAl)As lasers
1979
New heteroisolation stripe-geometry visible-light-emitting lasers
1975
A new technique for growth of thermal oxide films on GaAs
1979
Improvement in operation lives of GaAlAs visible lasers by introducing GaAlAs buffer layers
1981
A high-power, single-mode laser with twin-ridge-substrate structure
1983
A novel high-power laser structure with current-blocked regions near cavity facets
1987
Noise and longitudinal mode characteristics of (GaAl)As TS lasers with reduced facet reflectivities
1983