Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Fiber-optic fluorescence imaging
2005
Imaging in the era of molecular oncology
2008 StandoutNature
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Health effects of diesel exhaust emissions
2001
The impact of surface and retardation losses on valence electron energy-loss spectroscopy
2007
Bright light-emitting diodes based on organometal halide perovskite
2014 Standout
Investigating the optical properties of dislocations by scanning transmission electron microscopy
2008
Materials science applications of HREELS in near edge structure analysis and low-energy loss spectroscopy
2003
Air pollution and health
2002 Standout
Enhancement of resolution in core-loss and low-loss spectroscopy in a monochromated microscope
2006
New techniques in electron energy-loss spectroscopy and energy-filtered imaging
2003
Growth and applications of Group III-nitrides
1998
Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells
2003 StandoutNobel
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Luminescence spectra from InGaN multiquantum wells heavily doped with Si
1998
Molecule-by-Molecule Writing Using a Focused Electron Beam
2012 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
1998 StandoutNobel
Evidence for quantum-dot-like states in GaInN/GaN quantum wells?
1998
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films
2003 StandoutNobel
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
2003
Recombination dynamics of free and localized excitons inG a N / G a 0.93 Al 0.07 N
1998
Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
2000 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
III-V nitrides—important future electronic materials
1999
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Dimensionality of excitons in laser-diode structures composed ofIn x Ga 1 − x N
1999 StandoutNobel
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Structural analysis of InxGa1−xN single quantum wells by coaxial-impact collision ion scattering spectroscopy
2000 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet
2015
Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams
2001 StandoutNobel
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Optical characterization of wide bandgap semiconductors
2000 StandoutNobel
The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films
2004
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
2005
Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN
1999
GaN: Processing, defects, and devices
1999
Localized Excitons in InGaN
1997 StandoutNobel
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
2003
Group III-nitride based hetero and quantum structures
2000
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Imaging and Photodynamic Therapy: Mechanisms, Monitoring, and Optimization
2010 Standout
Quantitative Z-contrast imaging in the scanning transmission electron microscope with size-selected clusters
2011
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
1999 StandoutNobel
Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
1999
Recombination processes in InxGa1−xN light-emitting diodes studied through optically detected magnetic resonance
1998 StandoutNobel
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
2009
MOVPE of GaInN heterostructures and quantum wells
1998
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Group III nitride semiconductors for short wavelength light-emitting devices
1998
Spatially resolved cathodoluminescence spectra of InGaN quantum wells
1997 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Optical excitations in electron microscopy
2010 Standout
Band parameters for nitrogen-containing semiconductors
2003 Standout
Optical properties of doped InGaN/GaN multiquantum-well structures
1999 StandoutNobel
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
2013 StandoutNobel
Disclosing the Complex Structure of UiO-66 Metal Organic Framework: A Synergic Combination of Experiment and Theory
2011 Standout
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of Hubert Lakner being referenced
Metalorganic vapor phase epitaxial growth of GaInN/GaN hetero structures and quantum wells
1996
Nanoscale EELS analysis of dielectric function and bandgap properties in GaN and related materials
2000
In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
1997
Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques
1997
Large deflection micromechanical scanning mirrors for linear scans and pattern generation
2000
Investigation of inhomogeneities in (Al, Ga, In)N heterostructures by STEM and cathodoluminescence
1998
GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
1997
Investigations on the V-Defect Formation in GaInN-GaN Multi Quantum Well Structures
1999
Cathodoluminescence study of crystalline quality of (Al, In, Ga)N heterostructures
1997
Electronic structure analysis of (In, Ga, Al) N heterostructures on the nanometre scale using EELS
1999
32.O.06 Measurement of the properties of ultrafine iron oxide particles by means of on-line detection of particle magnetization, TDMA and STEM-analysis
1994
Characterization of MOVPE-grown (Al, In, Ga) N heterostructures by quantitative analytical electron microscopy
1997
Characterization of III - V semiconductor interfaces byZ-contrast imaging, EELS and CBED
1996