Hsin Tseng

Graphene‐Based Materials: Synthesis, Characterization, Properties, and Applications

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

High‐Performance Top‐Gated Graphene‐Nanoribbon Transistors Using Zirconium Oxide Nanowires as High‐Dielectric‐Constant Gate Dielectrics

The ReaxFF reactive force-field: development, applications and future directions

Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With $\hbox{Al}_{2}\hbox{O}_{3}$ and $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Gate Dielectrics

High-k/Ge MOSFETs for future nanoelectronics

Gate stack technology for nanoscale devices

Low-Frequency Noise in Submicrometer MOSFETs With HfO<tex>$_2$</tex>, HfO<tex>$_2/hbox Al_2hbox O_3$</tex>and HfAlO<tex>$_x$</tex>Gate Stacks