Citation Impact
Citing Papers
Reversing the pump dependence of a laser at an exceptional point
2014
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Band-Edge Exciton Fine Structure of SingleCdSe / ZnS
2010
Direct Observation of Rapid Discrete Spectral Dynamics in Single Colloidal CdSe-CdS Core-Shell Quantum Dots
2013 StandoutNobel
Deconstructing the photon stream from single nanocrystals: from binning to correlation
2013 StandoutNobel
Fast Thermo-Optical Excitability in a Two-Dimensional Photonic Crystal
2006
Detection of Bright Trion States Using the Fine Structure Emission of Single CdSe/ZnS Colloidal Quantum Dots
2009
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Halide Perovskite Photovoltaics: Background, Status, and Future Prospects
2019 Standout
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
2009 StandoutNobel
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
2010 StandoutNobel
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
2007 StandoutNobel
Single Photon Counting from Individual Nanocrystals in the Infrared
2012 StandoutNobel
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
2008 StandoutNobel
Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
2005 StandoutScience
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2010 StandoutNobel
Excitons in Metal‐Halide Perovskites
2020
Organic solid-state lasers
2000
Buried stressors in nitride semiconductors: Influence on electronic properties
2005
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Evolution of the Single-Nanocrystal Photoluminescence Linewidth with Size and Shell: Implications for Exciton–Phonon Coupling and the Optimization of Spectral Linewidths
2015 StandoutNobel
Electron and hole spin relaxation in modulation-doped CdMnTe quantum wells
2001
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
2011 StandoutNobel
Effects of noise in excitable systems
2004
Excitonic properties of polar, semipolar, and nonpolar InGaN∕GaN strained quantum wells with potential fluctuations
2008
Organic Semiconductor Lasers
2007 Standout
A unified view of ligand-protected gold clusters as superatom complexes
2008 Standout
Electron spin relaxation by nuclei in semiconductor quantum dots
2002
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Optical properties of highly excited direct gap semiconductors
1981
Structure of stochastic dynamics near fixed points
2005 StandoutNobel
Electronic excitations and longitudinal optical phonon modes of self-assembled CdSe quantum dots revealed by microprobe studies
1999
Huge exchange energy and fine structure of excitons in an organic-inorganic quantum well material
2006
Multi-Component Synthesis of a Buta-1,3-diene-Linked Covalent Organic Framework
2022 StandoutNobel
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Chemistry and Properties of Nanocrystals of Different Shapes
2005 Standout
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
Prospects for LED lighting
2009 StandoutNobel
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
2011 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
2008 StandoutNobel
Effects of polarization charge on the photovoltaic properties of InGaN solar cells
2010
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2007 StandoutNobel
Non-Hermitian physics and PT symmetry
2018 Standout
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
Recombination of free and bound excitons in GaN
2008
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
2009
Spectroscopy of neutral and charged exciton states in single CdSe/ZnS nanocrystals
2010
Narrow Intrinsic Line Widths and Electron–Phonon Coupling of InP Colloidal Quantum Dots
2023 StandoutNobel
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Organic–Inorganic Perovskites: Structural Versatility for Functional Materials Design
2016 Standout
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of H.‐J. Wünsche being referenced
Excitability of a Semiconductor Laser by a Two-Mode Homoclinic Bifurcation
2001
On the laser action of (Zn, Cd)Se multiple-quantum-well structures: Bi-excitons at elevated temperatures
1998
Bi-excitons in wide-gap II–VI quantum wells. Localization by alloy disorder
1996
Exciton Spin Relaxation in Semiconductor Quantum Wells: The Role of Disorder
1998
Transmission and Reflectivity of Highly Excited Semiconductors Due to the Optical Conversion of Excitons into Excitonic Molecules
1976
Magneto-optical study of the exciton fine structure in self-assembled CdSe quantum dots
1999
Mechanisms of fast self pulsations in two-section DFB lasers
1996
Temperature dependence of the radiative lifetime in GaN
1998
Optical properties of heavily dopedG a N / ( A l , G a ) N 6 H − S i C ( 0001 )
2000
Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells
2000