Citation Impact
Citing Papers
Underground hydrogen storage: Influencing parameters and future outlook
2021
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Machine learning for data-driven discovery in solid Earth geoscience
2019 StandoutScience
Maskless pendeo-epitaxial growth of GaN films
2002 StandoutNobel
Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown onm-Plane GaN
2009 StandoutNobel
The generation of misfit dislocations in facet-controlled growth of AlGaN∕GaN films
2004 StandoutNobel
The influence of mask area ratio on GaN regrowth by epitaxial lateral overgrowth
2007
High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE
2004 StandoutNobel
Direct water photoelectrolysis with patterned n-GaN
2007 StandoutNobel
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
2006 StandoutNobel
Solar Water Splitting Cells
2010 Standout
Resonant Raman and FTIR spectra of carbon doped GaN
2014 StandoutNobel
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays
2008
Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates
2002 StandoutNobel
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
2001 StandoutNobel
Growth of m ‐GaN layers by epitaxial lateral overgrowth from sapphire sidewalls
2009
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
Epitaxial lateral overgrowth techniques used in group III nitride epitaxy
2001
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
2000
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Growth and Characterization of Gan Bulk Crystals Via Vapor Phase Transport
2000 Nobel
Toward a Fundamental Understanding of Geological Hydrogen Storage
2022
Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
2013 StandoutNobel
High temperature nucleation and growth of GaN crystals from the vapor phase
2002 StandoutNobel
High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN
2007 StandoutNobel
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
2007
Technical and economic feasibility of centralized facilities for solar hydrogen production via photocatalysis and photoelectrochemistry
2013 Standout
Epitaxial Lateral Overgrowth of GaN
2001
Towards underground hydrogen storage: A review of barriers
2022 Standout
GaN Substrates for III-Nitride Devices
2009
Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate
2004
Fault Diagnosis Method Based on Principal Component Analysis and Broad Learning System
2019 Standout
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
2011 StandoutNobel
Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
2006 StandoutNobel
Spatial variation of electrical properties in lateral epitaxially overgrown GaN
2001
Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth
2008
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
2002 StandoutNobel
Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
2013 StandoutNobel
Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane
2013 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays
2014 StandoutNobel
Microstructure of a‐plane AlN grown on r‐plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy
2007 StandoutNobel
Machine learning reveals cyclic changes in seismic source spectra in Geysers geothermal field
2018
UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology
2005 StandoutNobel
Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
1999
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
2001 StandoutNobel
A review on underground hydrogen storage: Insight into geological sites, influencing factors and future outlook
2021
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio
2002 StandoutNobel
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
2001
Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy
2009 StandoutNobel
AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN
2012 StandoutNobel
Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
2007 StandoutNobel
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Review of polarity determination and control of GaN
2004
Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers
2000
Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template
2006
Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes
2011 StandoutNobel
Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth
2004 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Simulation of real gas mixture transport through aqueous nanopores during the depressurization process considering stress sensitivity
2019
Key inventions in the history of nitride-based blue LED and LD
2007 StandoutNobel
New approaches in experimental research on rock and fault behaviour in the Groningen gas field
2017
Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth
1999
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
GaN Overgrowth on Thermally Etched Nanoporous GaN Template
2013 StandoutNobel
Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures
2009 StandoutNobel
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Optical micro‐characterization of group‐III‐nitrides: correlation of structural, electronic and optical properties
2003
Air-bridged lateral epitaxial overgrowth of GaN thin films
2000
Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
2006 StandoutNobel
Works of Hiroki Sone being referenced
Stress-dependence of the permeability and porosity of sandstone and shale from TCDP Hole-A
2010
Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth
1998
Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
1998
Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples
2000
Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
1999
Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask
1998
Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
1999
Time-dependent deformation of shale gas reservoir rocks and its long-term effect on the in situ state of stress
2014
Spatiotemporal changes, faulting regimes, and source parameters of induced seismicity: A case study from The Geysers geothermal field
2014