Standout Papers

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices 1983 2026 1997 2011 744
  1. Production of large-area single-crystal wafers of cubic SiC for semiconductor devices (1983)
    Shigehiro Nishino, J. A. Powell et al. Applied Physics Letters

Immediate Impact

57 by Nobel laureates 20 from Science/Nature 88 standout
Sub-graph 1 of 21

Citing Papers

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2 intermediate papers

Works of Hannes Will being referenced

Epitaxial growth of 6H SiC in the temperature range 1320–1390°C
1973
Growth of Diamond Seed Crystals by Vapor Deposition
1968
and 1 more

Author Peers

Author Last Decade Papers Cites
Hannes Will 222 872 36 453 12 1.3k
Robert R. Reeber 179 416 3 883 36 1.4k
J. M. Lafferty 237 451 8 337 13 1.0k
Yozo Tokumaru 245 1001 8 678 40 1.5k
S. K. Bahl 178 615 5 780 21 1.2k
W. R. Heller 95 249 17 540 21 1.1k
W. G. Sainty 112 562 1 821 26 1.3k
H.‐J. Hagemann 322 542 1 729 22 1.3k
F. M. Smits 373 1019 10 516 28 1.7k
D. Fournier 493 561 548 20 1.7k
Daniel B. Butrymowicz 111 262 2 771 20 1.7k

All Works

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