Standout Papers

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate i... 1994 2026 2004 2015 986
  1. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration (1994)
    S. Takagi, Akira Toriumi et al. IEEE Transactions on Electron Devices

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Works of H. Tango being referenced

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
1994 Standout
On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation
1994
Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation
1983
Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film
1989
Hot-carrier-induced degradation of threshold voltage and transconductance in n -channel LDD and SD poly-Si TFTs
2002
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2026