Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
2014 StandoutNobel
Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes
2007 StandoutNobel
Influence of oxygen on the activation of p-type GaN
2000
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
2000
A review of Ga2O3 materials, processing, and devices
2018 Standout
Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage
2001
Thermally Driven Transport and Relaxation Switching Self‐Powered Electromagnetic Energy Conversion
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
The doping process and dopant characteristics of GaN
2002
An MOS transistor model for RF IC design valid in all regions of operation
2002
A comprehensive review of ZnO materials and devices
2005 Standout
Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium
2001 StandoutNobel
Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
2008 StandoutNobel
Nanoimprint Lithography: Methods and Material Requirements
2007 Standout
Green Semipolar (2021) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
2013 StandoutNobel
A Figure-of-Merit for Design and Optimization of Inductive Power Transmission Links for Millimeter-Sized Biomedical Implants
2016
Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
2006 StandoutNobel
Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3
2017
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
2017
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Design of junction termination structures for GaN Schottky power rectifiers
2003
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
2005 StandoutNobel
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
Transport conductivity of graphene at RF and microwave frequencies
2016
Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors
2000
Interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors
2003
Low Temperature Plasma‐Based Sterilization: Overview and State‐of‐the‐Art
2005 Standout
Wireless Power Transfer—An Overview
2018 Standout
Ex Situ and in Situ Methods for Oxide and Carbon Removal from AlN and GaN Surfaces
1995 StandoutNobel
Radio-Frequency Oxygen Plasma as a Sterilization Source
2004
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Mega‐cone blue LEDs based on ZnO/GaN direct wafer bonding
2007 StandoutNobel
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
2013 StandoutNobel
Progress in the growth of nonpolar gallium nitride
2007 StandoutNobel
Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy
2000
High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate
2007 StandoutNobel
Comparison of GaN p-i-n and Schottky rectifier performance
2001
Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode
2003
Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
2006 StandoutNobel
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Electrical effects of plasma damage in p-GaN
1999
Millimeter-wave CMOS design
2005 Standout
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Exchange bias in nanostructures
2005 Standout
A Survey of Wide Bandgap Power Semiconductor Devices
2013 Standout
The Blue Laser Diode
2000 StandoutNobel
Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy
2005 StandoutNobel
Direct measurement of base drift field in bipolar transistors
1992
Ordered magnetic nanostructures: fabrication and properties
2003
Works of H. Cho being referenced
Oxygen diffusion into SiO2-capped GaN during annealing
1999
Surface and bulk leakage currents in high breakdown GaN rectifiers
2000
Properties and Effects of Hydrogen in GaN
2000
Development of chemically assisted dry etching methods for magnetic device structures
1999
Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
1999
High voltage GaN Schottky rectifiers
2000
Effect of UV light irradiation on SiC dry etch rates
2000
A three-step method for the de-embedding of high-frequency S-parameter measurements
1991
Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers
2000