Citation Impact
Citing Papers
Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
1999
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Heterogeneous photocatalyst materials for water splitting
2008 Standout
Nano‐photocatalytic Materials: Possibilities and Challenges
2011 Standout
Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
2003 StandoutNobel
Double embedded photonic crystals for extraction of guided light in light-emitting diodes
2012 StandoutNobel
Photonic crystal laser lift-off GaN light-emitting diodes
2006 StandoutNobel
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Photoluminescence of TiO2: Eu3+ thin films obtained by solâgel on Si and Corning glass substrates
2001
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
Refractive index study of AlxGa1−xN films grown on sapphire substrates
2003
High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Nanoindentation of epitaxial GaN films
2000
Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy
2011
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
2011 Standout
Luminescence properties of defects in GaN
2005 Standout
Photocatalytic Overall Water Splitting on Gallium Nitride Powder
2007
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
2004 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal
1999 Standout
Inorganic caesium lead iodide perovskite solar cells
2015 Standout
Optical phonons and free-carrier effects in MOVPE grown AlxGa1−xN measured by Infrared Ellipsometry
1999
Systematic measurement of AlxGa1−xN refractive indices
2001
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Particulate Photocatalysts for Light-Driven Water Splitting: Mechanisms, Challenges, and Design Strategies
2019 Standout
Bioinspired Surfaces with Superwettability: New Insight on Theory, Design, and Applications
2015 Standout
Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2010 StandoutNobel
Time-resolved intervalley transitions in GaN single crystals
2007
Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
2004 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films
2001
Fabrication of GaN suspended microstructures
2001
Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence
2002 StandoutNobel
Optical characterization of wide bandgap semiconductors
2000 StandoutNobel
Strain-dependent magnetic phase diagram of epitaxial La0.67Sr0.33MnO3 thin films
2000
Band-gap narrowing and potential fluctuation in Si-doped GaN
1999
Superhydrophilic TiO2 surface without photocatalytic activation
2010
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Two-photon absorption study of GaN
2000
Semiconductor-based Photocatalytic Hydrogen Generation
2010 Standout
Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes
1998
Lanthanide-Based Luminescent Hybrid Materials
2009 Standout
Band-gap measurements of direct and indirect semiconductors using monochromated electrons
2007
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
2012 StandoutNobel
Energy band bowing parameter in AlxGa1−xN alloys
2002
Optical waveguide simulations for the optimization of InGaN-based green laser diodes
2010 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Anomalous first-order Raman scattering in III-V quantum dots: Optical deformation potential interaction
2008
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Ordinary and extraordinary refractive indices for AlxGa1−xN epitaxial layers
1999
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes
2009
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Excited-State Electron Transfer from CdS Quantum Dots to TiO2 Nanoparticles via Molecular Linkers with Phenylene Bridges
2009
Atomic arrangement at the AlN/ZrB2 interface
2002 StandoutNobel
Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
2000
Advanced Nanoarchitectures for Solar Photocatalytic Applications
2011 Standout
Optical excitations in electron microscopy
2010 Standout
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
2014 StandoutNobel
Predicted maximum mobility in bulk GaN
2001
Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness
2007 StandoutNobel
Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films
1997 Nobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Narrow Intrinsic Line Widths and Electron–Phonon Coupling of InP Colloidal Quantum Dots
2023 StandoutNobel
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
2001
The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C
2008
Reexamination of some spintronic field-effect device concepts
2004
Effect of composition on the band gap of strained InxGa1−xN alloys
2003
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
The band-gap bowing of AlxGa1−xN alloys
1999
Works of Guolin Yu being referenced
Energy-gap narrowing in a current injected InGaN/AlGaN surface light emitting diode
1997
Mechanical properties of the GaN thin films deposited on sapphire substrate
1998
The infrared optical functions of AlxGa1−xN determined by reflectance spectroscopy
1998
Optical phonon frequencies and damping in AlAs, GaP, GaAs, InP, InAs and InSb studied by oblique incidence infrared spectroscopy
2005
Refractive index and degree of inhomogeneity of nanocrystalline TiO2 thin films: Effects of substrate and annealing temperature
2000
Determination of optical constants of solgel-derived inhomogeneous TiO_2 thin films by spectroscopic ellipsometry and transmission spectroscopy
1998
Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method
1997
Infrared reflectivity of (GaAs)m/(AlAs)n superlattices
2003
Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition
1998
Optical properties of AlxGa1−xN/GaN heterostructures on sapphire by spectroscopic ellipsometry
1998