Citation Impact
Citing Papers
Increased blood-brain barrier permeability is associated with dementia and diabetes but not amyloid pathology or APOE genotype
2016
The road towards polaritonic devices
2016
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Optical microcavities
2003 StandoutNature
Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers
2008
The Neurovascular Unit Coming of Age: A Journey through Neurovascular Coupling in Health and Disease
2017 Standout
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Blood–brain barrier breakdown in Alzheimer disease and other neurodegenerative disorders
2018 Standout
Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices
2016
Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors
2015 Standout
Electron–phonon coupling in hybrid lead halide perovskites
2016 Standout
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Influence of electron-phonon interaction on the optical properties of III nitride semiconductors
2001
Stress-modulated composition in the vicinity of dislocations in nearly lattice matched Alx 1 − x
2011
Emission properties and thermal annealing of InGaN/GaN multiple quantum wells with different protection layers
2004
Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates
2009
Solid-State Lighting
2008
Theoretical description of H behavior in GaN p-n junctions
2001
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
2013 StandoutNobel
Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers
2009
Microstructures of GaInN/GaInN Superlattices on GaN Substrates
2010 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
2009 StandoutNobel
The doping process and dopant characteristics of GaN
2002
Surface-emitting laser-its birth and generation of new optoelectronics field
2000
Misfit dislocations in In‐rich InGaN/GaN quantum well structures
2006
Stacking faults in quaternary In Al Ga1−−N layers
2008
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes
2013 StandoutNobel
Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells
2007 StandoutNobel
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN
2010
Buried stressors in nitride semiconductors: Influence on electronic properties
2005
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Stacking Faults and Luminescence Property of InGaN Nanowires
2013 StandoutNobel
Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes
2010
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
2012
Continuous‐Wave Lasing in Cesium Lead Bromide Perovskite Nanowires
2017 StandoutNobel
Reactive species in non-equilibrium atmospheric-pressure plasmas: Generation, transport, and biological effects
2016 Standout
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
Blue emission band in compensated GaN:Mg codoped with Si
2003
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Effects of stress on phase separation in InxGa1−xN/GaN multiple quantum-wells
2011
Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors
1997
Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors
1996
GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
2013 StandoutNobel
High hole concentrations in Mg-doped InGaN grown by MOVPE
2000
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Enhancement of blue emission from GaN films and diodes by water vapor remote plasma treatment
2007
High hole concentration in Mg-doped a-plane Ga1−xInxN (<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy
2008 StandoutNobel
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
2003
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Over 1000 channel nitride-based micro-light-emitting diode arrays with tunnel junctions
2014 StandoutNobel
Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure
2006
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Increased CSF biomarkers of angiogenesis in Parkinson disease
2015
Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission
2014 StandoutNobel
Crack-free GaN∕AlN distributed Bragg reflectors incorporated with GaN∕AlN superlattices grown by metalorganic chemical vapor deposition
2006
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
2013 StandoutNobel
AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN
2012 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy
2014 StandoutNobel
Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence
2004
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
InGaN/GaN quantum wells with low growth temperature GaN cap layers
2007
Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method
2008
Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
2009 StandoutNobel
Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
2013 StandoutNobel
Fabrication of InGaN/GaN Multiple Quantum Wells on (1101) GaN
2013 StandoutNobel
Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
2012 StandoutNobel
In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth
2013 StandoutNobel
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures
2007
Spontaneous lifetime control of quantum dot emitters in apertured microcavities
1999
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
2011 StandoutNobel
Semipolar (2021) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
2013 StandoutNobel
Works of Guili Yang being referenced
Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition
2002
Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells
2001
Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer
1999
Phase separation and stacking fault of InxGa1−xN layers grown on thick GaN and sapphire substrate by metalorganic chemical vapor deposition
2000
Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition
2002
TNFSF15 inhibits vasculogenesis by regulating relative levels of membrane-bound and soluble isoforms of VEGF receptor 1
2013
Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition
2000
Codoping characteristics of Zn with Mg in GaN
2000
Superlattice-like stacking fault and phase separation of InxGa1−xN grown on sapphire substrate by metalorganic chemical vapor deposition
2000
Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition
2002
Comparative analysis of characteristics of Si, Mg, and undoped GaN
2000
Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition
2006
Ultralow threshold current vertical-cavity surface-emittinglasersobtained with selective oxidation
1995
Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density
2001