Citation Impact
Citing Papers
Hallucinations in Charles Bonnet Syndrome Induced by Homeostasis: a Deep Boltzmann Machine Model
2010
Warm Compress Induced Visual Degradation and Fischer-Schweitzer Polygonal Reflex
2007
Quality of life in age-related macular degeneration: a review of the literature
2006
Nonobvious Obstructive Meibomian Gland Dysfunction
2010
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Effect of a liposomal spray on the pre-ocular tear film
2010
Age-related macular degeneration
2018 Standout
Inner Eyelid Surface Temperature as a Function of Warm Compress Methodology
2008
Whatever next? Predictive brains, situated agents, and the future of cognitive science
2013 Standout
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Movpe Growth of High Quality AlxGa1−xN/GayIn1-yN (x>0, y<1) Heterostructures for Short Wavelength Light Emitter
1994 StandoutNobel
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
1998 StandoutNobel
High internal and external quantum efficiency InGaN/GaN solar cells
2011 StandoutNobel
Growth of GaN by ECR-assisted MBE
1993
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
Quantized states inGa 1 − x In x N / GaN
2000 StandoutNobel
Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
2000 StandoutNobel
Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy
1999
GaN-Based p–n Junction Blue-Light-Emitting Devices
2013 StandoutNobel
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN
2001 StandoutNobel
NK
1997 StandoutNobel
Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
1997
Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure
1996 StandoutNobel
Flat (1120) GaN Thin Film on Precisely Offset-Controlled (1102) Sapphire Substrate
2005 StandoutNobel
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
1997 StandoutNobel
Nitride semiconductors—impact on the future world
2002 StandoutNobel
Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method
2000 StandoutNobel
High-power UV InGaN/AlGaN double-heterostructure LEDs
1998 StandoutNobel
Optical properties of wurtzite GaN epilayers grown onA
1998 StandoutNobel
Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
2000 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
2006 StandoutNobel
Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
1999 StandoutNobel
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
1999 StandoutNobel
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
1997
Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers
2000 StandoutNobel
The International Workshop on Meibomian Gland Dysfunction: Report of the Subcommittee on Management and Treatment of Meibomian Gland Dysfunction
2011 Standout
Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers
2001 StandoutNobel
Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
2000 StandoutNobel
Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
2004 StandoutNobel
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
1993
A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure
2000 StandoutNobel
p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
1994 StandoutNobel
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
1998 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
2000 StandoutNobel
Key inventions in the history of nitride-based blue LED and LD
2007 StandoutNobel
Deep level defects in n-type GaN
1994 StandoutNobel
GaN/Al x Ga 1−x N quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale
1998
Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers
2002
Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer
1999 StandoutNobel
MBE Growth of (In)GaN for LED Applications
1996
Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth
2007 StandoutNobel
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy
2009 StandoutNobel
Quantum-well width dependence of threshold current density in InGaN lasers
1999 StandoutNobel
Localized vibrational modes in GaN:O tracing the formation of oxygenDX
2000 StandoutNobel
Works of Gopal Menon being referenced
Complex Visual Hallucinations in the Visually Impaired
2003
Tear film lipid layer thickness and ocular comfort after meibomian therapy via latent heat with a novel device in normal subjects
2004
A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE
1992