Gerhard Lindner

A comprehensive framework for the production of mycelium-based lignocellulosic composites

Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond

Two-dimensional phononic crystal sensor based on a cavity mode

Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling

Recovery of Structural Defects in GaN After Heavy Ion Implantation

Dynamics of Phononic Materials and Structures: Historical Origins, Recent Progress, and Future Outlook

Emission channeling studies of Li in semiconductors

Emission channeling

Recent achievements in miniaturised humidity sensors—a review of transduction techniques

Construction and built environment in circular economy: A comprehensive literature review

Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN

Substitutional phosphorus doping of diamond by ion implantation

Lattice site location studies of ion implanted Li8 in GaN

Low-temperature photoluminescence study of SnV centers in HPHT diamond

Humidity Sensors Principle, Mechanism, and Fabrication Technologies: A Comprehensive Review

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Lattice location of ion-implanted radioactive dopants in compound semiconductors

The production process and compressive strength of Mycelium-based materials

Probing of lattice defects by radioactive atoms

Site changes of ion-implanted Li in GaAs below 300 K

Direct Evidence for Substitutional Ion-Implanted Indium Dopants in Silicon

Emission channeling and blocking

Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes

Realization of simultaneous channeling and nuclear-hyperfine-interaction experiments

Sensors and actuators based on surface acoustic waves propagating along solid–liquid interfaces

PVDF-excited resonance sensors for gas flow and humidity measurements

Combined PAC and electron-channeling studies of He-defect interaction in CU between 300 and 900 K

Channeling of conversion electrons from radioactive impurities for analysis of atomic structures in solids

Localization of implanted radioactive probes by channeling of β−, β+ and conversion electrons