Gerald Ostermayer

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

First-principles calculations for point defects in solids

Doping properties of C, Si, and Ge impurities in GaN and AlN

Luminescence properties of defects in GaN

Formation of aDXcenter in InP under hydrostatic pressure

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Localized Donors in Gan: Spectroscopy Using Large Pressures

Evidence for localized Si-donor state and its metastable properties in AlGaN

DX-like behavior of oxygen in GaN

Wireless tactile sensing element using stress-sensitive resonator

First-principles calculations for defects and impurities: Applications to III-nitrides

Localized vibrational modes in GaN:O tracing the formation of oxygenDX-like centers under hydrostatic pressure

25th Anniversary Article: The Evolution of Electronic Skin (E‐Skin): A Brief History, Design Considerations, and Recent Progress

Wireless sensing using oscillator circuits locked to remote high-Q SAW resonators

Photoconductivity saturation of AlGaAs:Si-a new criterion for negative U

DX centres and Coulomb potential fluctuations