Citation Impact

Citing Papers

Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Low-threshold amplified spontaneous emission and lasing from colloidal nanocrystals of caesium lead halide perovskites
2015 Standout
High-brightness polarized light-emitting diodes
2012 StandoutNobel
High-resolution noise substitution to measure overfitting and validate resolution in 3D structure determination by single particle electron cryomicroscopy
2013 StandoutNobel
Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning
2016
Image contrast in high-resolution electron microscopy of biological macromolecules: TMV in ice
1992 StandoutNobel
Model for the structure of bacteriorhodopsin based on high-resolution electron cryo-microscopy
1990 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Phase accuracy in high-resolution electron microscopy of trigonal and orthorhombic purple membrane
1990 StandoutNobel
Complete composition tunability of InGaN nanowires using a combinatorial approach
2007
Radiation damage in the TEM and SEM
2004 Standout
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
2014 StandoutNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure
2010
Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO
2010 StandoutNobel
High spatial resolution picosecond cathodoluminescence of InGaN quantum wells
2006
Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate
2011
Solid-State Lighting
2008
High-resolution imaging on a field emission TEM
1993
Impact of Point Defects on the Luminescence Properties of (Al,Ga)N
2008 StandoutNobel
High internal and external quantum efficiency InGaN/GaN solar cells
2011 StandoutNobel
Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
2008 StandoutNobel
Stacking faults in quaternary In Al Ga1−−N layers
2008
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
2013
Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
2013 StandoutNobel
Organic solid‐state integrated amplifiers and lasers
2012
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes
2008 StandoutNobel
Manufacturing and measurement of freeform optics
2013 Standout
Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
2011 StandoutNobel
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Stacking Faults and Luminescence Property of InGaN Nanowires
2013 StandoutNobel
Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra
2008
High-Power and High-Efficiency InGaN-Based Light Emitters
2009
Improvement in high resolution image quality of radiation-sensitive specimens achieved with reduced spot size of the electron beam
1986
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
2012
Recent advances and applications of machine learning in solid-state materials science
2019 Standout
Organic Semiconductor Lasers
2007 Standout
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
2007 StandoutNobel
Low threshold blue conjugated polymer lasers with first- and second-order distributed feedback
2006
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Advances in Scanning Force Microscopy for Dimensional Metrology
2006
New light from hybrid inorganic–organic emitters
2008
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays
2014 StandoutNobel
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Use of spot-scan procedure for recording low-dose micrographs of beam-sensitive specimens
1987 StandoutNobel
Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0  \bar1  0) and semipolar (1 1  \bar{2}  2) orientations
2009 StandoutNobel
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission
2014 StandoutNobel
High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
2013 StandoutNobel
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
2013 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Emission and recombination characteristics ofGa1xInxNGaNquantum well structures with nonradiative recombination suppression by V-shaped pits
2007
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
2009 StandoutNobel
Low-temperature solution-processed wavelength-tunable perovskites for lasing
2014 Standout
When group-III nitrides go infrared: New properties and perspectives
2009
Electroluminescent measurement of the internal quantum efficiency of light emitting diodes
2009
Optical excitations in electron microscopy
2010 Standout
Nitride emitters go nonpolar
2007
Efficiency droop in nitride‐based light‐emitting diodes
2010
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Efficient and stable laser-driven white lighting
2013 StandoutNobel
Fabrication of InGaN/GaN Multiple Quantum Wells on (1101) GaN
2013 StandoutNobel
Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures
2007
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
2011 StandoutNobel
Efficiency of light emission in high aluminum content AlGaN quantum wells
2009
Room temperature excitonic recombination in GaInN/GaN quantum wells
2013

Works of George Ade being referenced

Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency
2005
Metrological characterization of nanometer film thickness standards for XRR and ellipsometry applications
2003
Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells
2007
The effect of non-isoplanatism in micrographs taken with an electron microscope equipped with a field emission gun
1985
Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes
2006
Realisation and metrological characterisation of thickness standards below 100�nm
2004
Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures
2006
A continuously tunable organic DFB laser
2005
Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters
2006
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