Standout Papers

The magnetophonon effect in n-PbTe 1973 2026 1990 2008 45
  1. The magnetophonon effect in n-PbTe (1973)
    D. C. Tsui, G. Kaminsky et al. Solid State Communications
  2. Tunneling study of surface quantization inn−PbTe (1974)
    D. C. Tsui, G. Kaminsky et al. Physical review. B, Solid state
  3. Influence of uniaxial stress on quantum effects in Si inversion layers (1976)
    D. C. Tsui, G. Kaminsky Surface Science
  4. Transport properties of GaAs IGFETs (1982)
    D. C. Tsui, A. C. Gossard et al. Surface Science
  5. Observation of Higher Sub-band inn-Type (100) Si Inversion Layers (1975)
    D. C. Tsui, G. Kaminsky Physical Review Letters
  6. Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surface (1976)
    D. C. Tsui, G. Kaminsky Solid State Communications
  7. Transport properties of GaAs-AlxGa1−x As heterojunction field-effect transistors (1981)
    D. C. Tsui, A. C. Gossard et al. Applied Physics Letters
  8. Observation of Sixfold Valley Degeneracy in Electron Inversion Layers on Si(111) (1979)
    D. C. Tsui, G. Kaminsky Physical Review Letters

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Works of G. Kaminsky being referenced

Observation of Higher Sub-band inn-Type (100) Si Inversion Layers
1975 StandoutNobel
Si inversion layers with a sixfold valley degeneracy
1980 Nobel
Transport properties of GaAs-AlxGa1−x As heterojunction field-effect transistors
1981 StandoutNobel
Transport properties of GaAs IGFETs
1982 StandoutNobel
Single-crystal silicon high-Q torsional oscillators
1985
Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surface
1976 StandoutNobel
Tunneling study of surface quantization inn−PbTe
1974 StandoutNobel
Anomalous Barrier Capacitance in p-n Junctions of InSb
1960
Preparation and Electrical Properties of Alloyed p-n Junctions of InSb
1959
Low-Level Interband Absorption in Phosphorus-Rich Gallium Arsenide-Phosphide
1969
Micromachining of silicon mechanical structures
1985
Influence of uniaxial stress on quantum effects in Si inversion layers
1976 StandoutNobel
Observation of Sixfold Valley Degeneracy in Electron Inversion Layers on Si(111)
1979 StandoutNobel
Absorption due to Bound Excitons in Silicon
1967
Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV
1967
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