G. Hubert

Radiation-induced soft errors in advanced semiconductor technologies

Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser

Basic mechanisms and modeling of single-event upset in digital microelectronics

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node

Contribution of SiO/sub 2/ in neutron-induced SEU in SRAMs

SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node

Various SEU conditions in SRAM studied by 3-D device simulation

Study of basic mechanisms induced by an ionizing particle on simple structures

Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions