Citation Impact
Citing Papers
Mini-LED, Micro-LED and OLED displays: present status and future perspectives
2020 Standout
High-brightness polarized light-emitting diodes
2012 StandoutNobel
High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy
2011 StandoutNobel
Metal‐Assisted Chemical Etching of Silicon: A Review
2010 Standout
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Mixed Transition‐Metal Oxides: Design, Synthesis, and Energy‐Related Applications
2014 Standout
Photonic crystal laser lift-off GaN light-emitting diodes
2006 StandoutNobel
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN
2002
m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
2009 StandoutNobel
Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
2004 StandoutNobel
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
2000
A review of Ga2O3 materials, processing, and devices
2018 Standout
Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage
2001
Novel activation process for Mg-implanted GaN
2013 StandoutNobel
Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate
2012
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
2006 StandoutNobel
Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire
2003
Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire
2007
A comprehensive review of ZnO materials and devices
2005 Standout
Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
2008 StandoutNobel
A high-resolution silicon-on-insulator arrayed waveguide grating microspectrometer with sub-micrometer aperture waveguides
2007
30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
2010 StandoutNobel
Chip Shaping for Light Extraction Enhancement of Bulk $c$-Plane Light-Emitting Diodes
2012 StandoutNobel
GaN-on-Si Power Technology: Devices and Applications
2017 Standout
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
A study of transparent indium tin oxide (ITO) contact to p-GaN
2001
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
2008 StandoutNobel
Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching
2002
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure
2006 StandoutNobel
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
2014 StandoutNobel
Electrical activation characteristics of silicon-implanted GaN
2005
Nonpolara-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
2011 StandoutNobel
Rh Thin-Film Nanocatalysts as Chemical Sensors — The Hot Electron Effect
2010
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes
2011
Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure
2005
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning
2009 StandoutNobel
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
2010
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
Characterization and Analysis of the Temperature-Dependent on -Resistance in AlGaN/GaN Lateral Field-Effect Rectifiers
2010
High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
2005 StandoutNobel
Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors
2000
Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals
2011 StandoutNobel
Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy
2003
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes
2019 Nobel
Compact spectrometer based on a disordered photonic chip
2013 Standout
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
2013 StandoutNobel
Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy
2000
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes
2007
Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode
2003
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Fermi level dependence of hydrogen diffusivity in GaN
2001
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO
2001
Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
2013 StandoutNobel
High-Detectivity GaN MSM Photodetectors with Low-Temperature GaN Cap Layers and Ir∕Pt Contact Electrodes
2007
Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
2004
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
N-polar GaN∕AlGaN∕GaN high electron mobility transistors
2007
Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching
2001
A Survey of Wide Bandgap Power Semiconductor Devices
2013 Standout
High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
2006 StandoutNobel
GaN Overgrowth on Thermally Etched Nanoporous GaN Template
2013 StandoutNobel
Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
2003
Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
2013 StandoutNobel
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
2009
Works of G. Dang being referenced
Double heterostructure ultraviolet light emitting diodes with nanometer scale compositionally inhomogeneous active regions
2008
High breakdown voltage Au/Pt/GaN Schottky diodes
2000
Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers
2000
Growth and Device Performance of GaN Schottky Rectifiers
1999
Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr
2000
Depth and thermal stability of dry etch damage in GaN Schottky diodes
1999
Quantum grid infrared spectrometer
2004
Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN
1999
Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers
2000
Schottky diode measurements of dry etch damage in n- and p-type GaN
2000
InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging
2007
GaN n- and p-type Schottky diodes: Effect of dry etch damage
2000
Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
1999
Comparison of GaN p-i-n and Schottky rectifier performance
2001
Electrical effects of plasma damage in p-GaN
1999
High voltage GaN Schottky rectifiers
2000
GaN electronics for high power, high temperature applications
2001
Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers
2000
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers
2000