F. Wulf

A review of Ga2O3 materials, processing, and devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Total ionizing dose effects in MOS oxides and devices

Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

Fundamentals of Modern VLSI Devices

Radiation Effects in MOS Oxides

Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing

Bias-temperature stress on metal-oxide-semiconductor structures as compared to ionizing irradiation and tunnel injection

Atomic displacement and total ionizing dose damage in semiconductors

Study of hydrogen incorporation in MOS-structures after various process steps using nuclear reaction analysis (NRA)