Citation Impact
Citing Papers
Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy
2000 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
2001 StandoutNature
Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots
2005
Gallium adsorption onto (1120) gallium nitride surfaces
2004 StandoutNobel
Control of strain in GaN using an In doping-induced hardening effect
2001 StandoutNobel
Strain relaxation in AlN epitaxial layers grown on GaN single crystals
1999
From visible to white light emission by GaN quantum dots on Si(111) substrate
1999
Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy
1999 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
In situ measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures
2004
Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires
1999
Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al0.4Ga0.6N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures
2001
The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
2000 StandoutNobel
Nanobelts of Semiconducting Oxides
2001 StandoutScience
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant
2000 StandoutNobel
Gallium adsorption on (0001) GaN surfaces
2003
High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
2006 StandoutNobel
Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN
2003
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Plastic strain relaxation of nitride heterostructures
2004
Strain relaxation in AlGaN/GaN superlattices grown on GaN
2001
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
GaN quantum dot density control by rf-plasma molecular beam epitaxy
2004
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
2005 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Phonon deformation potentials of wurtzite AlN
2003
Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN
2002
A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
2002
Giant electric fields in unstrained GaN single quantum wells
1999
GaN blue photonic crystal membrane nanocavities
2005 StandoutNobel
Improvements of the Optical and Electrical Properties of GaN Films by Using In-doping Method During Growth
1999
Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
1999
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
2003 StandoutNobel
Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization
2013 StandoutNobel
Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
2013 StandoutNobel
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
2003 Standout
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
2000 StandoutNobel
Structure of GaN(0001): The laterally contracted Ga bilayer model
2000
In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy
2013
Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots
2009
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Group III-nitride based hetero and quantum structures
2000
Chemistry and Properties of Nanocrystals of Different Shapes
2005 Standout
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Strain in cracked AlGaN layers
2002 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
2006 StandoutNobel
Control of strain in GaN by a combination of H2 and N2 carrier gases
2001 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer
2001
Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory
2008
Properties of strained wurtzite GaN and AlN:Ab initiostudies
2002
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Dichromatic color tuning with InGaN-based light-emitting diodes
2008 StandoutNobel
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
GaN/Al x Ga 1−x N quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale
1998
Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers
2002
Logic Gates and Computation from Assembled Nanowire Building Blocks
2001 StandoutScience
Full Color Emission from II-VI Semiconductor Quantum Dot-Polymer Composites
2000 StandoutNobel
GaN evaporation in molecular-beam epitaxy environment
1999
Band parameters for nitrogen-containing semiconductors
2003 Standout
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Substrates for gallium nitride epitaxy
2002
Indium adsorption on GaN under metal-organic chemical vapor deposition conditions
2006
The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD
2000
Works of F. Widmann being referenced
Layer-by-layer growth of AlN and GaN by molecular beam epitaxy
1997
Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy
1998
Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
1997
Growth kinetics and optical properties of self-organized GaN quantum dots
1998
Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy
1999
Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy
1999
2D/3D growth of GaN by molecular beam epitaxy: towards GaN quantum dots
1997
Phonons in a strained hexagonal GaN–AlN superlattice
1999
Evidence of 2D-3D transition during the first stages of GaN growth on AlN
1997
How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy
1998
Improved quality GaN grown by molecular beam epitaxy using In as a surfactant
1998
Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
1998
Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice
2001