Citation Impact
Citing Papers
Nanoparticles: Properties, applications and toxicities
2017 Standout
Room-Temperature Polariton Lasing in Semiconductor Microcavities
2007
Two-dimensional light confinement in periodic InGaN/GaN nanocolumn arrays and optically pumped blue stimulated emission
2009
Uncovering temperature-dependent exciton-polariton relaxation mechanisms in hybrid organic-inorganic perovskites
2023 StandoutNobel
Strong coupling between surface plasmon polaritons and emitters: a review
2014 Standout
Cavity Polaritons in InGaN Microcavities at Room Temperature
2004
Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates
2010
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
2005
Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate
2007
Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers
2009
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
2004
Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
2011
Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)
2005
Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy
2012 StandoutNobel
Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition
2011 StandoutNobel
Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory
2010
Polariton light-emitting diode in a GaAs-based microcavity
2008
Anisotropy of tensile stresses and cracking in nonbasal plane AlxGa1−xN/GaN heterostructures
2010
Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
2005
Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
2013 StandoutNobel
GaN-Based RF Power Devices and Amplifiers
2008 Standout
Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
2013 StandoutNobel
UV polaritonic emission from a perovskite-based microcavity
2008
Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
2013 StandoutNobel
Quantum fluids of light
2013 Standout
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
2006 StandoutNobel
Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy
2006 StandoutNobel
Perspective on the Development of Lead‐free Piezoceramics
2009 Standout
Growth dynamics of interfacially polymerized polyamide layers by diffuse reflectance spectroscopy and Rutherford backscattering spectrometry
2012
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
2011 StandoutNobel
Optical strong coupling in microcavities containing J-aggregates absorbing in near-infrared spectral range
2006
Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
2005
Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors
2011
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
2005 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
2003
Temperature dependence of the upper-branch polariton population in an organic semiconductor microcavity
2011
Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities
2008
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
GaN blue photonic crystal membrane nanocavities
2005 StandoutNobel
Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
2012 StandoutNobel
12 W/mm AlGaN–GaN HFETs on Silicon Substrates
2004
Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates
2011 StandoutNobel
Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications
2006
Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays
2014 StandoutNobel
Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
2004
Controlling the interactions between polaritons and molecular vibrations in strongly coupled organic semiconductor microcavities
2008
Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission
2014 StandoutNobel
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
2013 StandoutNobel
AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN
2012 StandoutNobel
Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001)
2004
Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
2012 StandoutNobel
Theoretical Prediction of New High-Performance Lead-Free Piezoelectrics
2005
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
2007 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
X-ray scattering characterisation of nanoparticles
2015
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
2006 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures
2012 StandoutNobel
Lasing in topological edge states of a one-dimensional lattice
2017 Standout
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
GaN Overgrowth on Thermally Etched Nanoporous GaN Template
2013 StandoutNobel
Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
2012 StandoutNobel
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Sub–10 nm polyamide nanofilms with ultrafast solvent transport for molecular separation
2015 StandoutScience
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Thermally-Limited Exciton Delocalization in Superradiant Molecular Aggregates
2012 StandoutNobel
Organic–Inorganic Perovskites: Structural Versatility for Functional Materials Design
2016 Standout
Works of F. Natali being referenced
Structure of oxidized bismuth nanoclusters
2007
Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector
2003
Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon
2005
Phonon deformation potentials in hexagonal GaN
2004
High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
2003
AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density
2003
Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates
2003
Observation of Rabi splitting in a bulk GaN microcavity grown on silicon
2003
AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111)
2002
Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells
2009
Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
2003
From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)
2004